A oxide nanowire for probing nanoscale memristive switching

Kazuki Nagashima, Takeshi Yanagida, Masaki Kanai, Tomoji Kawai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Memristive switching, which is nonvolatile resistive switching in metal/oxide/metal sandwich structures, have attracted considerable attention not only for the next-generation nonvolatile memory but also for the artificial neural network computing. Despite the excellent memory performance, the physical origin of memristive switching occurring in the simple two terminal device structure had been missing, which was a central issue of this research field. It was widely accepted that the memristive switching is governed by formation and rupture of nanoscale conducting path in insulative matrix, however, extracting and evaluating such nanoscale conduction paths was difficult due to the lack of evaluation method. In this study, we demonstrate a unique approach to reveal the nature of memristive switching by using an oxide nanowire. The oxide nanowire successfully extracted the nanoscale conduction path and revealed the redox based conduction mechanism with the direct experimental evidence, which had been unfeasible in conventional thin film device form. The obtained results captured the many intrinsic features of memristive switching.

本文言語英語
ホスト出版物のタイトルIEEE-NANO 2015 - 15th International Conference on Nanotechnology
出版社Institute of Electrical and Electronics Engineers Inc.
ページ120-123
ページ数4
ISBN(電子版)9781467381550
DOI
出版ステータス出版済み - 2015
イベント15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, イタリア
継続期間: 7 27 20157 30 2015

出版物シリーズ

名前IEEE-NANO 2015 - 15th International Conference on Nanotechnology

その他

その他15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
国/地域イタリア
CityRome
Period7/27/157/30/15

All Science Journal Classification (ASJC) codes

  • プロセス化学およびプロセス工学
  • 電子工学および電気工学
  • セラミックおよび複合材料
  • 電子材料、光学材料、および磁性材料
  • 表面、皮膜および薄膜

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