A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC

Susumu Kamoi, Kenji Kisoda, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Tanaka Satoru, Akihiro Hashimoto, Hiroki Hibino

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

Few-layer epitaxial graphenes grown on vicinal 6H-SiC (0001) were characterized by confocal Raman imaging. In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next, few-layer graphenes started to grow toward directions perpendicular to [11-20] of the SiC substrate. The shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene. The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the substrate with increasing of the growth times.

元の言語英語
ページ(範囲)80-83
ページ数4
ジャーナルDiamond and Related Materials
25
DOI
出版物ステータス出版済み - 5 1 2012

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Epitaxial layers
Graphene
graphene
Imaging techniques
Substrates
Compressive stress
Monolayers
shift

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

これを引用

A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC. / Kamoi, Susumu; Kisoda, Kenji; Hasuike, Noriyuki; Harima, Hiroshi; Morita, Kouhei; Satoru, Tanaka; Hashimoto, Akihiro; Hibino, Hiroki.

:: Diamond and Related Materials, 巻 25, 01.05.2012, p. 80-83.

研究成果: ジャーナルへの寄稿記事

Kamoi, Susumu ; Kisoda, Kenji ; Hasuike, Noriyuki ; Harima, Hiroshi ; Morita, Kouhei ; Satoru, Tanaka ; Hashimoto, Akihiro ; Hibino, Hiroki. / A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC. :: Diamond and Related Materials. 2012 ; 巻 25. pp. 80-83.
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AU - Harima, Hiroshi

AU - Morita, Kouhei

AU - Satoru, Tanaka

AU - Hashimoto, Akihiro

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