A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC

Susumu Kamoi, Kenji Kisoda, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Tanaka Satoru, Akihiro Hashimoto, Hiroki Hibino

研究成果: ジャーナルへの寄稿 › 記事

2 引用 (Scopus)

抄録

Few-layer epitaxial graphenes grown on vicinal 6H-SiC (0001) were characterized by confocal Raman imaging. In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next, few-layer graphenes started to grow toward directions perpendicular to [11-20] of the SiC substrate. The shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene. The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the substrate with increasing of the growth times.

元の言語英語
ページ（範囲）80-83
ページ数4
ジャーナルDiamond and Related Materials
巻25
DOI
出版物ステータス出版済み - 5 1 2012

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Graphite
Epitaxial layers
Graphene
graphene
Imaging techniques
Substrates
Compressive stress
Monolayers
shift

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

これを引用

A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC. / Kamoi, Susumu; Kisoda, Kenji; Hasuike, Noriyuki; Harima, Hiroshi; Morita, Kouhei; Satoru, Tanaka; Hashimoto, Akihiro; Hibino, Hiroki.

：: Diamond and Related Materials, 巻 25, 01.05.2012, p. 80-83.

研究成果: ジャーナルへの寄稿 › 記事

Kamoi, S, Kisoda, K, Hasuike, N, Harima, H, Morita, K, Satoru, T, Hashimoto, A & Hibino, H 2012, 'A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC', Diamond and Related Materials, 巻. 25, pp. 80-83. https://doi.org/10.1016/j.diamond.2012.02.017
Kamoi S, Kisoda K, Hasuike N, Harima H, Morita K, Satoru T その他. A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC. Diamond and Related Materials. 2012 5 1;25:80-83. https://doi.org/10.1016/j.diamond.2012.02.017
Kamoi, Susumu ; Kisoda, Kenji ; Hasuike, Noriyuki ; Harima, Hiroshi ; Morita, Kouhei ; Satoru, Tanaka ; Hashimoto, Akihiro ; Hibino, Hiroki. / A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC. ：: Diamond and Related Materials. 2012 ; 巻 25. pp. 80-83.
@article{9d1cedcae2e145b4b4105f8d6ace049f,
title = "A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC",
abstract = "Few-layer epitaxial graphenes grown on vicinal 6H-SiC (0001) were characterized by confocal Raman imaging. In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next, few-layer graphenes started to grow toward directions perpendicular to [11-20] of the SiC substrate. The shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene. The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the substrate with increasing of the growth times.",
author = "Susumu Kamoi and Kenji Kisoda and Noriyuki Hasuike and Hiroshi Harima and Kouhei Morita and Tanaka Satoru and Akihiro Hashimoto and Hiroki Hibino",
year = "2012",
month = "5",
day = "1",
doi = "10.1016/j.diamond.2012.02.017",
language = "English",
volume = "25",
pages = "80--83",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC

AU - Kamoi, Susumu

AU - Kisoda, Kenji

AU - Hasuike, Noriyuki

AU - Harima, Hiroshi

AU - Morita, Kouhei

AU - Satoru, Tanaka

AU - Hashimoto, Akihiro

AU - Hibino, Hiroki

PY - 2012/5/1

Y1 - 2012/5/1

N2 - Few-layer epitaxial graphenes grown on vicinal 6H-SiC (0001) were characterized by confocal Raman imaging. In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next, few-layer graphenes started to grow toward directions perpendicular to [11-20] of the SiC substrate. The shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene. The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the substrate with increasing of the growth times.

AB - Few-layer epitaxial graphenes grown on vicinal 6H-SiC (0001) were characterized by confocal Raman imaging. In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next, few-layer graphenes started to grow toward directions perpendicular to [11-20] of the SiC substrate. The shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene. The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the substrate with increasing of the growth times.

UR - http://www.scopus.com/inward/record.url?scp=84857943414&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857943414&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2012.02.017

DO - 10.1016/j.diamond.2012.02.017

M3 - Article

AN - SCOPUS:84857943414

VL - 25

SP - 80

EP - 83

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

ER -

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