TY - JOUR
T1 - A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC
AU - Kamoi, Susumu
AU - Kisoda, Kenji
AU - Hasuike, Noriyuki
AU - Harima, Hiroshi
AU - Morita, Kouhei
AU - Tanaka, Satoru
AU - Hashimoto, Akihiro
AU - Hibino, Hiroki
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/5
Y1 - 2012/5
N2 - Few-layer epitaxial graphenes grown on vicinal 6H-SiC (0001) were characterized by confocal Raman imaging. In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next, few-layer graphenes started to grow toward directions perpendicular to [11-20] of the SiC substrate. The shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene. The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the substrate with increasing of the growth times.
AB - Few-layer epitaxial graphenes grown on vicinal 6H-SiC (0001) were characterized by confocal Raman imaging. In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next, few-layer graphenes started to grow toward directions perpendicular to [11-20] of the SiC substrate. The shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene. The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the substrate with increasing of the growth times.
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U2 - 10.1016/j.diamond.2012.02.017
DO - 10.1016/j.diamond.2012.02.017
M3 - Article
AN - SCOPUS:84857943414
VL - 25
SP - 80
EP - 83
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
ER -