A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system

Yuki Yamashita, Daisuke Kanemoto, Haruichi Kanaya, Ramesh Pokharel, Keiji Yoshida

研究成果: ジャーナルへの寄稿レター

2 引用 (Scopus)

抄録

This paper describes the design of 5-GHz fully integrated self-biasing power amplifier (PA) for wireless transmitter applications in a 0.18-μm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3 mm2. The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4% power-added efficiency with 2.3V power supply voltage into a 50 Ω load.

元の言語英語
ジャーナルIEICE Electronics Express
10
発行部数8
DOI
出版物ステータス出版済み - 2013

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power amplifiers
Power amplifiers
envelopes
Modulation
modulation
chips
power efficiency
power supplies
transmitters
Transmitters
CMOS
topology
amplifiers
Topology
output
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system. / Yamashita, Yuki; Kanemoto, Daisuke; Kanaya, Haruichi; Pokharel, Ramesh; Yoshida, Keiji.

:: IEICE Electronics Express, 巻 10, 番号 8, 2013.

研究成果: ジャーナルへの寄稿レター

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abstract = "This paper describes the design of 5-GHz fully integrated self-biasing power amplifier (PA) for wireless transmitter applications in a 0.18-μm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3 mm2. The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4{\%} power-added efficiency with 2.3V power supply voltage into a 50 Ω load.",
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