A-Si:H pixel electrode circuits for AM-OLEDs

J. Kanicki, Y. He, R. Hattori

研究成果: Contribution to journalConference article査読

抄録

A new pixel electrode circuit based on hydrogenated amorphous silicon (a-Si:H) technology has been designed, fabricated and characterized for the active-matrix organic light-emitting displays. This circuit has four thin-film-transistors (TFTs) and only two external terminals. In addition, a current driver is used to provide the signals to the data line and automatically adjust the current level to compensate for the threshold voltage shifts of both the organic light-emitting devices and the drive TFT. Consequently, this pixel electrode circuit has an excellent electrical reliability even when a large threshold voltage shift is present. Experimental results indicate that an continuous pixel electrode excitation can be achieved with these circuits. Even after a long time circuit aging stress, this circuit only shows an output current level variation less than 1% at the high current level (≥0.5μA) and less than 5% at the low (≤0.1 μA) current levels. Two additional pixel electrode circuits have also been proposed. These new circuits can achieve a higher output current level and a better output-input current linearity without sacrificing the circuit's electrical reliability. All these circuits can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).

本文言語英語
ページ(範囲)147-158
ページ数12
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
4295
DOI
出版ステータス出版済み - 1 1 2001
外部発表はい
イベントFlat Panel Display Tecnology and Display Metrology II - San Jose, CA, 米国
継続期間: 1 22 20011 23 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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