A Standard Sample Preparation Method for the Determination of Metal Impurities on a Silicon Wafer by Total Reflection X-Ray Fluorescence Spectrometry†

Yoshihiro Mori, Kengo Shimanoe, Tadashi Sakon

研究成果: Contribution to journalArticle査読

29 被引用数 (Scopus)

抄録

Total reflection X-ray fluorescence spectrometry (TXRF) is widely used for the determination of surface metal contamination on a silicon wafer. In TXRF measurements, calibration standard samples are needed to quantify the metal concentration. We propose a new method for the preparation of calibration standard samples for TXRF. The method is called “Immersion in Alkaline Hydrogen Peroxide Solution (IAP)”, in which the silicon wafers are immersed in an intentionally contaminated alkaline hydrogen peroxide solution. Samples made by the IAP method are suitable calibration standard samples for TXRF because of their good depth profile reproducibility and good uniformity on the surface as well as homogeneity in a given batch. They can also be applied for making a cross-check among plural TXRF instruments as well as among different analytical methods.

本文言語英語
ページ(範囲)499-504
ページ数6
ジャーナルanalytical sciences
11
3
DOI
出版ステータス出版済み - 1 1 1995
外部発表はい

All Science Journal Classification (ASJC) codes

  • 分析化学

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