TY - JOUR
T1 - A strategy for boosting the thermoelectric performance of famatinite Cu3SbS4
AU - Tanishita, Taiki
AU - Suekuni, Koichiro
AU - Nishiate, Hirotaka
AU - Lee, Chul Ho
AU - Ohtaki, Michitaka
N1 - Funding Information:
We are grateful to H. Usui for fruitful discussion on the electronic structure. This work was supported financially by grants from CREST JST under Grant No. JPMJCR16Q6, grants from the International Joint Research Program for Innovative Energy Technology funded by METI, and JSPS KAKENHI under Grant No. JP17H04951 (K.S.), Japan.
Publisher Copyright:
© 2020 the Owner Societies.
PY - 2020
Y1 - 2020
N2 - Famatinite Cu3SbS4 has attracted attention for its potential application in thermoelectric (TE) contexts. In this work, we report the impacts of co-substituting Ge and P for Sb on TE properties. Melting and heat treatment methods were adopted to synthesize samples of Cu3Sb1-x-yGexPyS4 (x ≤ 0.4, y ≤ 0.3). In this system, Ge functioned as an acceptor for doping a hole to the valence band, which led to enhancement of the TE power factor. Contrastingly, P barely altered the electronic structure. Furthermore, both Ge and P acted as point defects, which effectively decreased lattice thermal conductivity. The combined effects of the co-substitution gave rise to an enhanced dimensionless figure of merit, ZT, of 0.67 at 673 K.
AB - Famatinite Cu3SbS4 has attracted attention for its potential application in thermoelectric (TE) contexts. In this work, we report the impacts of co-substituting Ge and P for Sb on TE properties. Melting and heat treatment methods were adopted to synthesize samples of Cu3Sb1-x-yGexPyS4 (x ≤ 0.4, y ≤ 0.3). In this system, Ge functioned as an acceptor for doping a hole to the valence band, which led to enhancement of the TE power factor. Contrastingly, P barely altered the electronic structure. Furthermore, both Ge and P acted as point defects, which effectively decreased lattice thermal conductivity. The combined effects of the co-substitution gave rise to an enhanced dimensionless figure of merit, ZT, of 0.67 at 673 K.
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U2 - 10.1039/c9cp06233e
DO - 10.1039/c9cp06233e
M3 - Article
C2 - 31904070
AN - SCOPUS:85078685233
VL - 22
SP - 2081
EP - 2086
JO - Physical Chemistry Chemical Physics
JF - Physical Chemistry Chemical Physics
SN - 1463-9076
IS - 4
ER -