A Surge-Free Intelligent Power Device Specific to Automotive High Side Switches

Tsutomu Matsushita, Teruyoshi Mihara, Hiroshi Ikeda, masaki Hirota, Yukitsugu Hirota

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

抄録

A new type of Intelligent Power Device (IPD), which is suitable for automotive monolithic High Side Switch with high current capability, is presented. An integration of a vertical-power DMOSFET and planar MOS IC devices is performed by the newly developed Junction-Isolation technique using only one epitaxial growth. The isolation voltage of 80 V has been obtained, which is large enough for automotive IPD’s if they are protected against high voltage transients on the battery line. A rugged vertical DMOSFET (VDMOS) has also been developed for this IPD. It has a cellular Zener diode between its source and drain, which prevents the secondary breakdown of parasitic bipolar transistor, and the resulting avalanche capability enhancement is more than an order of magnitude. This VDMOS is used for both output power device and protection device for low-voltage MOS circuitry, which makes the IPD free from any transients in the automobile without the need for external protection.

元の言語英語
ページ(範囲)1576-1581
ページ数6
ジャーナルIEEE Transactions on Electron Devices
38
発行部数7
DOI
出版物ステータス出版済み - 1 1 1991
外部発表Yes

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Switches
Electric potential
Zener diodes
Bipolar transistors
Epitaxial growth
Automobiles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

A Surge-Free Intelligent Power Device Specific to Automotive High Side Switches. / Matsushita, Tsutomu; Mihara, Teruyoshi; Ikeda, Hiroshi; Hirota, masaki; Hirota, Yukitsugu.

:: IEEE Transactions on Electron Devices, 巻 38, 番号 7, 01.01.1991, p. 1576-1581.

研究成果: ジャーナルへの寄稿記事

Matsushita, Tsutomu ; Mihara, Teruyoshi ; Ikeda, Hiroshi ; Hirota, masaki ; Hirota, Yukitsugu. / A Surge-Free Intelligent Power Device Specific to Automotive High Side Switches. :: IEEE Transactions on Electron Devices. 1991 ; 巻 38, 番号 7. pp. 1576-1581.
@article{1f0daabeae9c4ba69ef70b12993e3dca,
title = "A Surge-Free Intelligent Power Device Specific to Automotive High Side Switches",
abstract = "A new type of Intelligent Power Device (IPD), which is suitable for automotive monolithic High Side Switch with high current capability, is presented. An integration of a vertical-power DMOSFET and planar MOS IC devices is performed by the newly developed Junction-Isolation technique using only one epitaxial growth. The isolation voltage of 80 V has been obtained, which is large enough for automotive IPD’s if they are protected against high voltage transients on the battery line. A rugged vertical DMOSFET (VDMOS) has also been developed for this IPD. It has a cellular Zener diode between its source and drain, which prevents the secondary breakdown of parasitic bipolar transistor, and the resulting avalanche capability enhancement is more than an order of magnitude. This VDMOS is used for both output power device and protection device for low-voltage MOS circuitry, which makes the IPD free from any transients in the automobile without the need for external protection.",
author = "Tsutomu Matsushita and Teruyoshi Mihara and Hiroshi Ikeda and masaki Hirota and Yukitsugu Hirota",
year = "1991",
month = "1",
day = "1",
doi = "10.1109/16.85152",
language = "English",
volume = "38",
pages = "1576--1581",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - A Surge-Free Intelligent Power Device Specific to Automotive High Side Switches

AU - Matsushita, Tsutomu

AU - Mihara, Teruyoshi

AU - Ikeda, Hiroshi

AU - Hirota, masaki

AU - Hirota, Yukitsugu

PY - 1991/1/1

Y1 - 1991/1/1

N2 - A new type of Intelligent Power Device (IPD), which is suitable for automotive monolithic High Side Switch with high current capability, is presented. An integration of a vertical-power DMOSFET and planar MOS IC devices is performed by the newly developed Junction-Isolation technique using only one epitaxial growth. The isolation voltage of 80 V has been obtained, which is large enough for automotive IPD’s if they are protected against high voltage transients on the battery line. A rugged vertical DMOSFET (VDMOS) has also been developed for this IPD. It has a cellular Zener diode between its source and drain, which prevents the secondary breakdown of parasitic bipolar transistor, and the resulting avalanche capability enhancement is more than an order of magnitude. This VDMOS is used for both output power device and protection device for low-voltage MOS circuitry, which makes the IPD free from any transients in the automobile without the need for external protection.

AB - A new type of Intelligent Power Device (IPD), which is suitable for automotive monolithic High Side Switch with high current capability, is presented. An integration of a vertical-power DMOSFET and planar MOS IC devices is performed by the newly developed Junction-Isolation technique using only one epitaxial growth. The isolation voltage of 80 V has been obtained, which is large enough for automotive IPD’s if they are protected against high voltage transients on the battery line. A rugged vertical DMOSFET (VDMOS) has also been developed for this IPD. It has a cellular Zener diode between its source and drain, which prevents the secondary breakdown of parasitic bipolar transistor, and the resulting avalanche capability enhancement is more than an order of magnitude. This VDMOS is used for both output power device and protection device for low-voltage MOS circuitry, which makes the IPD free from any transients in the automobile without the need for external protection.

UR - http://www.scopus.com/inward/record.url?scp=0026186417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026186417&partnerID=8YFLogxK

U2 - 10.1109/16.85152

DO - 10.1109/16.85152

M3 - Article

AN - SCOPUS:0026186417

VL - 38

SP - 1576

EP - 1581

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 7

ER -