A UV light-emitting diode incorporating GaN quantum dots

Tanaka Satoru, Jeong Sik Lee, Peter Ramvall, Hiroaki Okagawa

研究成果: ジャーナルへの寄稿レター

41 引用 (Scopus)

抄録

The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x ∼ 0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

元の言語英語
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
発行部数8 A
出版物ステータス出版済み - 8 1 2003
外部発表Yes

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Ultraviolet radiation
Semiconductor quantum dots
Diodes
light emitting diodes
quantum dots
Electroluminescence
electroluminescence
Light emitting diodes
Luminescence
Photoluminescence
luminescence
injection
photoluminescence
Fabrication
fabrication
evaluation
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

これを引用

A UV light-emitting diode incorporating GaN quantum dots. / Satoru, Tanaka; Lee, Jeong Sik; Ramvall, Peter; Okagawa, Hiroaki.

:: Japanese Journal of Applied Physics, Part 2: Letters, 巻 42, 番号 8 A, 01.08.2003.

研究成果: ジャーナルへの寄稿レター

Satoru, Tanaka ; Lee, Jeong Sik ; Ramvall, Peter ; Okagawa, Hiroaki. / A UV light-emitting diode incorporating GaN quantum dots. :: Japanese Journal of Applied Physics, Part 2: Letters. 2003 ; 巻 42, 番号 8 A.
@article{c1964f35ede446dfbb434ec2f5ecbac1,
title = "A UV light-emitting diode incorporating GaN quantum dots",
abstract = "The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x ∼ 0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.",
author = "Tanaka Satoru and Lee, {Jeong Sik} and Peter Ramvall and Hiroaki Okagawa",
year = "2003",
month = "8",
day = "1",
language = "English",
volume = "42",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "8 A",

}

TY - JOUR

T1 - A UV light-emitting diode incorporating GaN quantum dots

AU - Satoru, Tanaka

AU - Lee, Jeong Sik

AU - Ramvall, Peter

AU - Okagawa, Hiroaki

PY - 2003/8/1

Y1 - 2003/8/1

N2 - The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x ∼ 0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

AB - The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x ∼ 0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

UR - http://www.scopus.com/inward/record.url?scp=0141569159&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141569159&partnerID=8YFLogxK

M3 - Letter

AN - SCOPUS:0141569159

VL - 42

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 A

ER -