Ab initio-based approach on initial growth kinetics of GaN on GaN (0 0 1)

Y. Kangawa, Y. Matsuo, T. Akiyama, T. Ito, K. Shiraishi, K. Kakimoto

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

We carried out theoretical analyses based on ab initio calculations that incorporate free energy of the vapor phase in order to determine the initial growth process of cubic GaN on GaN (0 0 1)-(4×1). The results suggest that a N-adsorbed structure appears at the initial growth stage and then Ga adsorbs on the N-adsorbed GaN (0 0 1)-(4×1) surface. Considering this process, we performed Monte Carlo simulations. The results suggest that the maximum point of Ga coverage after supplying a frac(1, 32) monolayer of atoms shifted toward a Ga-rich condition from V/III=1.0.

本文言語英語
ページ(範囲)75-78
ページ数4
ジャーナルJournal of Crystal Growth
301-302
SPEC. ISS.
DOI
出版ステータス出版済み - 4 1 2007

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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