TY - JOUR
T1 - Ab initio model for GaAs1%xNx chemical beam epitaxy using GaAs(100) surface stability over As2, H2, and N2
AU - Valencia, Hubert
AU - Kangawa, Yoshihiro
AU - Kakimoto, Koichi
N1 - Funding Information:
The present study was supported by the New Energy and Industrial Technology Development Organization (NEDO) as part of the Innovative Photo-voltaic Technology R&D program, under the Ministry of Economy, Trade, and Industry, Japan.
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/6
Y1 - 2017/6
N2 - A model for the chemical beam epitaxy (CBE) of GaAs1%xNx was previously constructed on the basis of first-principles calculations of (100) surfaces of GaAs with As2 and H2 adsorptions and As/N substitution to simulate As2, H2, and N2 mixed gas conditions. We previously demonstrated that this model can be used to predict the temperature and pressure dependences of the growth behavior in metal-organic chemical vapor deposition (MOCVD). In this paper, we show that little modification is needed to transpose this model to CBE experiments. Our model allows us to predict transition temperatures at which Arrhenius regimes of N2 incorporation are changed. Additionally, an explanation of the trend of resulting regimes is given, which is based on the analysis of surface stability during growth at different temperatures.
AB - A model for the chemical beam epitaxy (CBE) of GaAs1%xNx was previously constructed on the basis of first-principles calculations of (100) surfaces of GaAs with As2 and H2 adsorptions and As/N substitution to simulate As2, H2, and N2 mixed gas conditions. We previously demonstrated that this model can be used to predict the temperature and pressure dependences of the growth behavior in metal-organic chemical vapor deposition (MOCVD). In this paper, we show that little modification is needed to transpose this model to CBE experiments. Our model allows us to predict transition temperatures at which Arrhenius regimes of N2 incorporation are changed. Additionally, an explanation of the trend of resulting regimes is given, which is based on the analysis of surface stability during growth at different temperatures.
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U2 - 10.7567/JJAP.56.060306
DO - 10.7567/JJAP.56.060306
M3 - Article
AN - SCOPUS:85020197247
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
M1 - 060306
ER -