抄録
Abrikosov vortex memory cells have been studied with a view to achieving high vortex sensitivity and low write-current levels. By using an overhang structure, the vortex sensitivity has been increased to several times that of previous cell structure. The distribution of stored vortices were measured, verifying that stored vortices accumulate near the entrance edge of vortex storage (VSR). Using a Lorentz current flowing through the VSR film, the vortices were successfully driven toward the sense gate. Write current levels of less than 6 mA were achieved by using amorphous Mo films with a low pinning force.
| 本文言語 | 英語 |
|---|---|
| ジャーナル | IEEE Transactions on Magnetics |
| 巻 | MAG-23 |
| 号 | 2 |
| 出版ステータス | 出版済み - 3 1986 |
| 外部発表 | はい |
All Science Journal Classification (ASJC) codes
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学