抜粋
Abrikosov vortex memory cells have been studied with a view to achieving high vortex sensitivity and low write-current levels. By using an overhang structure, the vortex sensitivity has been increased to several times that of previous cell structure. The distribution of stored vortices were measured, verifying that stored vortices accumulate near the entrance edge of vortex storage (VSR). Using a Lorentz current flowing through the VSR film, the vortices were successfully driven toward the sense gate. Write current levels of less than 6 mA were achieved by using amorphous Mo films with a low pinning force.
| 元の言語 | 英語 |
|---|---|
| ジャーナル | IEEE Transactions on Magnetics |
| 巻 | MAG-23 |
| 発行部数 | 2 |
| 出版物ステータス | 出版済み - 3 1986 |
| 外部発表 | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
フィンガープリント ABRIKOSOV VORTEX MEMORY WITH IMPROVED SENSITIVITY AND REDUCED WRITE CURRENT LEVELS.' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Miyahara, K., Mukaida, M., Tokumitsu, M., Kubo, S., & Hohkawa, K. (1986). ABRIKOSOV VORTEX MEMORY WITH IMPROVED SENSITIVITY AND REDUCED WRITE CURRENT LEVELS. IEEE Transactions on Magnetics, MAG-23(2).