ABRIKOSOV VORTEX MEMORY WITH IMPROVED SENSITIVITY AND REDUCED WRITE CURRENT LEVELS.

K. Miyahara, Masashi Mukaida, M. Tokumitsu, S. Kubo, K. Hohkawa

研究成果: Contribution to journalArticle査読

抄録

Abrikosov vortex memory cells have been studied with a view to achieving high vortex sensitivity and low write-current levels. By using an overhang structure, the vortex sensitivity has been increased to several times that of previous cell structure. The distribution of stored vortices were measured, verifying that stored vortices accumulate near the entrance edge of vortex storage (VSR). Using a Lorentz current flowing through the VSR film, the vortices were successfully driven toward the sense gate. Write current levels of less than 6 mA were achieved by using amorphous Mo films with a low pinning force.

本文言語英語
ジャーナルIEEE Transactions on Magnetics
MAG-23
2
出版ステータス出版済み - 3 1986
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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