ABRIKOSOV VORTEX MEMORY WITH NOVEL CELL STRUCTURE.

Kazunori Miyahara, Masashi Mukaida, Kohji Hohkawa

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

A nondestructive readout random access memory cell based on the use of Abrikosov vortices in thin-film type-II superconductors is newly designed and experimentally tested. The cell occupies an area of 30 multiplied by 60 mu m**2 with a 5- mu m design rule. Proper memory cell operation is achieved in the so-called 1,-1 mode using the shift saturation effect which occurs on the characteristics of the write currents vs. the shift value of the sense gate threshold curves. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co-evaporated at 90 K for the vortex storage region.

本文言語英語
ホスト出版物のタイトルConference on Solid State Devices and Materials
出版社Japan Soc of Applied Physics
ページ119-122
ページ数4
ISBN(印刷版)4930813107, 9784930813107
DOI
出版ステータス出版済み - 1985
外部発表はい

出版物シリーズ

名前Conference on Solid State Devices and Materials

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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