Absolute surface energies of oxygen-adsorbed GaN surfaces

Takahiro Kawamura, Toru Akiyama, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto

研究成果: Contribution to journalArticle査読

抄録

Absolute surface energies of reconstructed polar, nonpolar, and semi-polar GaN surfaces formed under oxide vapor phase epitaxy (OVPE) growth conditions were investigated via first-principles calculations. The relationships of stable surface orientations and surface structures with the growth conditions of Ga pressure and temperature were examined in terms of absolute surface energies. The stability of the surface orientation was in the order (0 0 0 1¯), (1 1¯ 0 1), (1 1¯ 0 0), (1 1 2¯ 0), (0 0 0 1), and (1 1¯ 0 1¯). High O concentrations on OVPE-grown GaN could be explained in relation to the stability of the (1 1¯ 0 1) surface. The stable (1 1¯ 0 1) surface consisted of N vacancies and H and O adatoms. Therefore, it was deduced that its appearance results in increased O impurity incorporation.

本文言語英語
論文番号125868
ジャーナルJournal of Crystal Growth
549
DOI
出版ステータス出版済み - 11 1 2020

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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