Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses

Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, Wataru Saito, Yuhao Zhang

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

GaN high electron mobility transistors (HEMTs) have limited avalanche capability and withstand the surge energy through capacitive charging, which often causes significant voltage overshoot up to their catastrophic limit. This work explores the parametric shift and recovery of a commercial Schottky-type, p-gate GaN HEMT under repetitive, overvoltage switching stresses near its dynamic breakdown voltage. In particular, the device recovery under various temperatures is comprehensively studied, which allows the identification of the de-trapping dynamics and dominant trap energy levels for the first time. Devices were stressed in a clamped inductive switching circuit with 1-million surge energy cycles with a voltage overshoot reaching 1300 V. The parametric shifts showed a saturation and were found to be caused by holes generated in impact ionization. The device recovery was found to be accelerated by elevated ambient temperatures, and a hole-trap energy level of 0.52 eV was identified to dominate the parametric shift and recovery. These results suggest the significance of hole dynamics on the overvoltage robustness of p-gate GaN HEMTs near their dynamic breakdown voltage.

本文言語英語
ホスト出版物のタイトル2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページP221-P225
ISBN(電子版)9781665479509
DOI
出版ステータス出版済み - 2022
外部発表はい
イベント2022 IEEE International Reliability Physics Symposium, IRPS 2022 - Dallas, 米国
継続期間: 3月 27 20223月 31 2022

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
2022-March
ISSN(印刷版)1541-7026

会議

会議2022 IEEE International Reliability Physics Symposium, IRPS 2022
国/地域米国
CityDallas
Period3/27/223/31/22

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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