Acceleration of Photocarrier Relaxation in Graphene Achieved by Epitaxial Growth: Ultrafast Photoluminescence Decay of Monolayer Graphene on SiC

Hirotaka Imaeda, Takeshi Koyama, Hideo Kishida, Kenji Kawahara, Hiroki Ago, Ryotaro Sakakibara, Wataru Norimatsu, Tomo O. Terasawa, Jianfeng Bao, Michiko Kusunoki

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Acceleration of photocarrier relaxation in graphene results in the enhancement of its properties for graphene-based ultrafast optical devices. The acceleration can be achieved by utilizing the relaxation paths outside the graphene to avoid bottlenecks in the graphene for photocarrier relaxation. In this study, we investigate photocarrier relaxation in epitaxial and transferred monolayer graphene on SiC with a buffer layer at room temperature by means of time-resolved photoluminescence spectroscopy. The photoluminescence decay at 0.7 eV in the epitaxial monolayer graphene is faster than that in the transferred monolayer graphene. On the basis of the three-Temperature model calculation, it is found that the carrier-phonon interaction with phonons of the buffer layer for the epitaxial monolayer graphene is 3 times stronger than that for the transferred monolayer graphene. This study demonstrates that ultrafast photocarrier relaxation can be achieved in graphene by epitaxial growth.

元の言語英語
ページ(範囲)19273-19279
ページ数7
ジャーナルJournal of Physical Chemistry C
122
発行部数33
DOI
出版物ステータス出版済み - 8 23 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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    Imaeda, H., Koyama, T., Kishida, H., Kawahara, K., Ago, H., Sakakibara, R., Norimatsu, W., Terasawa, T. O., Bao, J., & Kusunoki, M. (2018). Acceleration of Photocarrier Relaxation in Graphene Achieved by Epitaxial Growth: Ultrafast Photoluminescence Decay of Monolayer Graphene on SiC. Journal of Physical Chemistry C, 122(33), 19273-19279. https://doi.org/10.1021/acs.jpcc.8b06845