TY - JOUR
T1 - Accuracy of Total Reflection X-Ray Fluorescence Spectrometry near the Detection Limit
AU - Mori, Yoshihiro
AU - Kubota, Kazuhiko
AU - Shimanoe, Kengo
AU - Sakon, Tadashi
PY - 1998
Y1 - 1998
N2 - Total reflection X-ray fluorescence spectrometry (TXRF) is one of the most common tools to analyze metal contaminants on silicon wafers and other substrate surfaces. Although the detection limit of commercial TXRF was improved to the concentration region of 109toms cm-2, its accuracy at low concentration was not yet clarified until now. In this paper, we examine the accuracy of the quantitative analysis by TXRF under 1011 atoms cm-2 for Fe, Ni, Cu and Zn. In particular, four factors (standard sample, reference analyzing method, compensation of spurious peak and peak separation) are considered. Under a controlled condition, the accuracy is within 20% as compared with atomic absorption spectrophptometry (AAS).
AB - Total reflection X-ray fluorescence spectrometry (TXRF) is one of the most common tools to analyze metal contaminants on silicon wafers and other substrate surfaces. Although the detection limit of commercial TXRF was improved to the concentration region of 109toms cm-2, its accuracy at low concentration was not yet clarified until now. In this paper, we examine the accuracy of the quantitative analysis by TXRF under 1011 atoms cm-2 for Fe, Ni, Cu and Zn. In particular, four factors (standard sample, reference analyzing method, compensation of spurious peak and peak separation) are considered. Under a controlled condition, the accuracy is within 20% as compared with atomic absorption spectrophptometry (AAS).
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U2 - 10.2116/analsci.14.275
DO - 10.2116/analsci.14.275
M3 - Article
AN - SCOPUS:0032379217
SN - 0910-6340
VL - 14
SP - 275
EP - 280
JO - Analytical Sciences
JF - Analytical Sciences
IS - 2
ER -