Accuracy of Total Reflection X-Ray Fluorescence Spectrometry near the Detection Limit

Yoshihiro Mori, Kazuhiko Kubota, Kengo Shimanoe, Tadashi Sakon

研究成果: ジャーナルへの寄稿記事

12 引用 (Scopus)

抄録

Total reflection X-ray fluorescence spectrometry (TXRF) is one of the most common tools to analyze metal contaminants on silicon wafers and other substrate surfaces. Although the detection limit of commercial TXRF was improved to the concentration region of 10 9 toms cm -2 , its accuracy at low concentration was not yet clarified until now. In this paper, we examine the accuracy of the quantitative analysis by TXRF under 10 11 atoms cm -2 for Fe, Ni, Cu and Zn. In particular, four factors (standard sample, reference analyzing method, compensation of spurious peak and peak separation) are considered. Under a controlled condition, the accuracy is within 20% as compared with atomic absorption spectrophptometry (AAS).

元の言語英語
ページ(範囲)275-280
ページ数6
ジャーナルanalytical sciences
14
発行部数2
DOI
出版物ステータス出版済み - 1 1 1998

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Silicon wafers
Metals
Impurities
Atoms
Substrates
Chemical analysis
X-Ray Emission Spectrometry
Compensation and Redress

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry

これを引用

Accuracy of Total Reflection X-Ray Fluorescence Spectrometry near the Detection Limit. / Mori, Yoshihiro; Kubota, Kazuhiko; Shimanoe, Kengo; Sakon, Tadashi.

:: analytical sciences, 巻 14, 番号 2, 01.01.1998, p. 275-280.

研究成果: ジャーナルへの寄稿記事

Mori, Yoshihiro ; Kubota, Kazuhiko ; Shimanoe, Kengo ; Sakon, Tadashi. / Accuracy of Total Reflection X-Ray Fluorescence Spectrometry near the Detection Limit. :: analytical sciences. 1998 ; 巻 14, 番号 2. pp. 275-280.
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