Accurate dry etching technique for germanium waveguide by using CHF3 based inductively coupled plasma

A. S. Idris, H. Jiang, K. Hamamoto

研究成果: ジャーナルへの寄稿記事

抜粋

A CHF3 inductively coupled plasma (ICP) based dry etching method is proposed for accurate etching of Ge waveguides. CHF3 ICP based dry etching produces excellent anisotropy along with good selectivity with regards to regular polymeric photoresist, which leads to the elimination of under-cut. As a result, an almost vertical sidewall angle of 85° with an etching rate of 190 nm/min was realised with a relatively high selectivity ratio of 5:1 against regular photoresist.

元の言語英語
ページ(範囲)1868-1869
ページ数2
ジャーナルElectronics Letters
52
発行部数22
DOI
出版物ステータス出版済み - 10 27 2016

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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