Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

M. Watanabe, N. Shigyo, T. Hoshii, K. Furukawa, K. Kakushima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, I. Muneta, H. Wakabayashi, A. Nakajima, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the J_{C}^{-}}V_{\text{CE} characteristics obtained by 3D- TCAD simulations and experiments. The carrier lifetime requirement for scaled trench-gate IGBTs was determined by extraction of the on-resistance of the n-base layer derived from the electric potential profile.

本文言語英語
ホスト出版物のタイトル2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728181769
DOI
出版ステータス出版済み - 4 8 2021
イベント5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, 中国
継続期間: 4 8 20214 11 2021

出版物シリーズ

名前2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

会議

会議5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
国/地域中国
CityChengdu
Period4/8/214/11/21

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 産業および生産工学
  • 電子材料、光学材料、および磁性材料

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