Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

M. Watanabe, N. Shigyo, T. Hoshii, K. Furukawa, K. Kakushima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, I. Muneta, H. Wakabayashi, A. Nakajima, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science

Chemical Compounds