Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer

H. Okamoto, K. Yamamoto, D. Wang, H. Nakashima

研究成果: 会議への寄与タイプ › 学会誌 › 査読

本文言語	英語
ページ	643-644
ページ数	2
DOI	https://doi.org/10.7567/ssdm.2016.o-6-04l
出版ステータス	出版済み - 9月 29 2016
イベント	2016 International Conference on Solid State Devices and Materials (SSDM2016) - Tsukuba International Congress Center, Tsukuba, 日本継続期間: 9月 26 2016 → 9月 29 2016

会議	2016 International Conference on Solid State Devices and Materials (SSDM2016)
国/地域	日本
City	Tsukuba
Period	9/26/16 → 9/29/16

文献へのアクセス

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title = "Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer",

author = "H. Okamoto and K. Yamamoto and D. Wang and H. Nakashima",

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T1 - Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer

AU - Okamoto, H.

AU - Yamamoto, K.

AU - Wang, D.

AU - Nakashima, H.

PY - 2016/9/29

Y1 - 2016/9/29

U2 - 10.7567/ssdm.2016.o-6-04l

DO - 10.7567/ssdm.2016.o-6-04l

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T2 - 2016 International Conference on Solid State Devices and Materials (SSDM2016)

Y2 - 26 September 2016 through 29 September 2016

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