Achievement of ultralow contact resistivity of metal/n + -ge contacts with Zr-N-Ge amorphous interlayer

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抜粋

A bottleneck for achieving Gc-CMOS is the Fermi-level pinning (FLP) phenomenon, which causes high electron barrier height (Obn) for metal/Ge contacts, resulting in an increase in contact resistivity (ρ c ) between metal and n + -source/drain for n-MOSFET. We have found that the low Φ bn can be realized by directly sputtered TiN/Ge and ZrN/Ge contacts, which is induced by amorphous interlayer (a-IL) formed during the sputter deposition. In this paper, we present that the a-IL in the ZrN/Ge contact can be retained on Ge surface, which enables us to fabricate metal/a-IL/Ge contacts with different metals. We investigated the electrical properties of metal/a-IL/Gc and metal/a-IL/n + -Ge contacts and showed that the a-IL remarkably modulate the Φ bn and ρ c . As a result, we succeeded in ultralow ρ c for Ag/a-IL/n + -Ge with post metallization annealing at 400°C, which was an average ρ c value of 2×10 -7 ω·cm 2

元の言語英語
ホスト出版物のタイトルECS Transactions
編集者K. Shiojima, A. Mai, J. Murota, P. Chin, C. L. Claeys, H. Iwai, S. Deleonibus, M. Tao
出版者Electrochemical Society Inc.
ページ97-106
ページ数10
エディション4
ISBN(電子版)9781607685395
DOI
出版物ステータス出版済み - 1 1 2017
イベント10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting - National Harbor, 米国
継続期間: 10 1 201710 5 2017

出版物シリーズ

名前ECS Transactions
番号4
80
ISSN(印刷物)1938-6737
ISSN(電子版)1938-5862

その他

その他10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting
米国
National Harbor
期間10/1/1710/5/17

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Nakashima, H., Okamoto, H., Yamamoto, K., & Wang, D. (2017). Achievement of ultralow contact resistivity of metal/n + -ge contacts with Zr-N-Ge amorphous interlayer : K. Shiojima, A. Mai, J. Murota, P. Chin, C. L. Claeys, H. Iwai, S. Deleonibus, ... M. Tao (版), ECS Transactions (4 版, pp. 97-106). (ECS Transactions; 巻数 80, 番号 4). Electrochemical Society Inc.. https://doi.org/10.1149/08004.0097ecst