Achieving zT > 2 in p-Type AgSbTe2− xSex Alloys via Exploring the Extra Light Valence Band and Introducing Dense Stacking Faults

Min Hong, Zhi Gang Chen, Lei Yang, Zhi Ming Liao, Yi Chao Zou, Yan Hui Chen, Syo Matsumura, Jin Zou

研究成果: Contribution to journalArticle

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抜粋

Through simultaneously enhancing the power factor by engineering the extra light band and enhancing phonon scatterings by introducing a high density of stacking faults, a record figure-of-merit over 2.0 is achieved in p-type AgSbTe2− xSex alloys. Density functional theory calculations confirm the presence of the light valence band with large degeneracy in AgSbTe2, and that alloying with Se decreases the energy offset between the light valence band and the valence band maximum. Therefore, a significantly enhanced power factor is realized in p-type AgSbTe2− xSex alloys. In addition, transmission electron microscopy studies indicate the appearance of stacking faults and grain boundaries, which together with grain boundaries and point defects significantly strengthen phonon scatterings, leading to an ultralow thermal conductivity. The synergetic strategy of simultaneously enhancing power factor and strengthening phonon scattering developed in this study opens up a robust pathway to tailor thermoelectric performance.

元の言語英語
記事番号1702333
ジャーナルAdvanced Energy Materials
8
発行部数9
DOI
出版物ステータス出版済み - 3 26 2018

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

フィンガープリント Achieving zT > 2 in p-Type AgSbTe<sub>2−</sub> <sub>x</sub>Se<sub>x</sub> Alloys via Exploring the Extra Light Valence Band and Introducing Dense Stacking Faults' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

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