Activation treatment of ion implanted dopants using hybrid super RTA equipment

Akimasa Kinoshita, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamato, Shin Ichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

3 被引用数 (Scopus)

抄録

We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA) equipment. The HS-RTA equipment consists of an infrared annealing unit and a RF induction annealing unit in order to uniformly anneal over 2-inch φ susceptor. As a result of annealing by the HS-RTA equipment, the temperature is elevated from RT to peak temperature (∼1800°C) for less than 1 min, remain stable at annealing temperature for 30s and falls from peak temperature to 1000°C within less than 20s. The temperature distributions on a 2-inch φ susceptor are ±10°C, ±33°C and ±55°C at 1565°C, 1671°C and 1752°C, respectively. Phosphorus (P) ion implanted silicon carbide (SiC) samples are used to evaluate the performance of the HS-RTA equipment. The five implanted samples placed on the 2-inch φ susceptor are annealed for 30s at 1565°C, 1671°C and 1752°C. The mean sheet resistances of the 5 samples annealed at 1565°C, 1671°C and 1752°C are 92.6Ω/□, 82.6Ω/□ and 75.50/□, respectively. The sheet resistance uniformities are 9.9%, 7.9% and 9.3%. The average roughness (Ra) is calculated from 10 μm square Atomic Force Microscopy (AFM) image. Ra values of the samples annealed at 1565°C, 1671°C and 1752°C are 2.399 nm, 2.408 nm and 3.282 nm, respectively.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
ページ803-806
ページ数4
PART 2
出版ステータス出版済み - 12 1 2006
外部発表はい
イベントInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, 米国
継続期間: 9 18 20059 23 2005

出版物シリーズ

名前Materials Science Forum
番号PART 2
527-529
ISSN(印刷版)0255-5476

その他

その他International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
国/地域米国
CityPittsburgh, PA
Period9/18/059/23/05

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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