Activation treatment of ion implanted dopants using hybrid super RTA equipment

Akimasa Kinoshita, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamato, Shinichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

抄録

We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA) equipment. The HS-RTA equipment consists of an infrared annealing unit and a RF induction annealing unit in order to uniformly anneal over 2-inch φ susceptor. As a result of annealing by the HS-RTA equipment, the temperature is elevated from RT to peak temperature (∼1800°C) for less than 1 min, remain stable at annealing temperature for 30s and falls from peak temperature to 1000°C within less than 20s. The temperature distributions on a 2-inch φ susceptor are ±10°C, ±33°C and ±55°C at 1565°C, 1671°C and 1752°C, respectively. Phosphorus (P) ion implanted silicon carbide (SiC) samples are used to evaluate the performance of the HS-RTA equipment. The five implanted samples placed on the 2-inch φ susceptor are annealed for 30s at 1565°C, 1671°C and 1752°C. The mean sheet resistances of the 5 samples annealed at 1565°C, 1671°C and 1752°C are 92.6Ω/□, 82.6Ω/□ and 75.50/□, respectively. The sheet resistance uniformities are 9.9%, 7.9% and 9.3%. The average roughness (Ra) is calculated from 10 μm square Atomic Force Microscopy (AFM) image. Ra values of the samples annealed at 1565°C, 1671°C and 1752°C are 2.399 nm, 2.408 nm and 3.282 nm, respectively.

元の言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005
ページ803-806
ページ数4
エディションPART 2
出版物ステータス出版済み - 12 1 2006
イベントInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, 米国
継続期間: 9 18 20059 23 2005

出版物シリーズ

名前Materials Science Forum
番号PART 2
527-529
ISSN(印刷物)0255-5476

その他

その他International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
米国
Pittsburgh, PA
期間9/18/059/23/05

Fingerprint

Rapid thermal annealing
Chemical activation
Doping (additives)
Ions
Annealing
Sheet resistance
Temperature
Silicon carbide
Phosphorus
Atomic force microscopy
Temperature distribution
Surface roughness
Infrared radiation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Kinoshita, A., Senzaki, J., Katou, M., Harada, S., Okamato, M., Nishizawa, S., ... Yashima, T. (2006). Activation treatment of ion implanted dopants using hybrid super RTA equipment. : Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005 (PART 2 版, pp. 803-806). (Materials Science Forum; 巻数 527-529, 番号 PART 2).

Activation treatment of ion implanted dopants using hybrid super RTA equipment. / Kinoshita, Akimasa; Senzaki, Junji; Katou, Makoto; Harada, Shinsuke; Okamato, Mitsuo; Nishizawa, Shinichi; Fukuda, Kenji; Morigasa, Fukuyoshi; Endou, Tomoyoshi; Isii, Takuo; Yashima, Teruyuki.

Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2. 編 2006. p. 803-806 (Materials Science Forum; 巻 527-529, 番号 PART 2).

研究成果: 著書/レポートタイプへの貢献会議での発言

Kinoshita, A, Senzaki, J, Katou, M, Harada, S, Okamato, M, Nishizawa, S, Fukuda, K, Morigasa, F, Endou, T, Isii, T & Yashima, T 2006, Activation treatment of ion implanted dopants using hybrid super RTA equipment. : Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 Edn, Materials Science Forum, 番号 PART 2, 巻. 527-529, pp. 803-806, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, 米国, 9/18/05.
Kinoshita A, Senzaki J, Katou M, Harada S, Okamato M, Nishizawa S その他. Activation treatment of ion implanted dopants using hybrid super RTA equipment. : Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2 版 2006. p. 803-806. (Materials Science Forum; PART 2).
Kinoshita, Akimasa ; Senzaki, Junji ; Katou, Makoto ; Harada, Shinsuke ; Okamato, Mitsuo ; Nishizawa, Shinichi ; Fukuda, Kenji ; Morigasa, Fukuyoshi ; Endou, Tomoyoshi ; Isii, Takuo ; Yashima, Teruyuki. / Activation treatment of ion implanted dopants using hybrid super RTA equipment. Silicon Carbide and Related Materials - 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials -2005. PART 2. 版 2006. pp. 803-806 (Materials Science Forum; PART 2).
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abstract = "We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA) equipment. The HS-RTA equipment consists of an infrared annealing unit and a RF induction annealing unit in order to uniformly anneal over 2-inch φ susceptor. As a result of annealing by the HS-RTA equipment, the temperature is elevated from RT to peak temperature (∼1800°C) for less than 1 min, remain stable at annealing temperature for 30s and falls from peak temperature to 1000°C within less than 20s. The temperature distributions on a 2-inch φ susceptor are ±10°C, ±33°C and ±55°C at 1565°C, 1671°C and 1752°C, respectively. Phosphorus (P) ion implanted silicon carbide (SiC) samples are used to evaluate the performance of the HS-RTA equipment. The five implanted samples placed on the 2-inch φ susceptor are annealed for 30s at 1565°C, 1671°C and 1752°C. The mean sheet resistances of the 5 samples annealed at 1565°C, 1671°C and 1752°C are 92.6Ω/□, 82.6Ω/□ and 75.50/□, respectively. The sheet resistance uniformities are 9.9{\%}, 7.9{\%} and 9.3{\%}. The average roughness (Ra) is calculated from 10 μm square Atomic Force Microscopy (AFM) image. Ra values of the samples annealed at 1565°C, 1671°C and 1752°C are 2.399 nm, 2.408 nm and 3.282 nm, respectively.",
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