Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

This paper investigates an active gate driver for a large capacity multi-chip SiC-MOSFET power module. The active gate driver utilizes the reactive voltage of the source wire inductance as the negative feedback signal of the gate voltage. In addition, the feedback stabilization design is included in the circuit. The switching characteristics of the conventional resistive gate driver and the active gate driver are experimentally investigated by a double pulse test setup. The switching setup condition is 800 V / 300 A. This paper describes the construction of the active gate driver circuit and the experimental results. The over-shoot and ringing of the Vds and Is are reduced by using the active gate driver. In addition, the switching loss is simultaneously reduced.

本文言語英語
ホスト出版物のタイトルProceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1350-1353
ページ数4
ISBN(電子版)9781728163444
DOI
出版ステータス出版済み - 5 24 2021
イベント12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 - Virtual, Singapore, シンガポール
継続期間: 5 24 20215 27 2021

出版物シリーズ

名前Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021

会議

会議12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
国/地域シンガポール
CityVirtual, Singapore
Period5/24/215/27/21

All Science Journal Classification (ASJC) codes

  • 制御と最適化
  • エネルギー工学および電力技術
  • 電子工学および電気工学
  • 機械工学

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