Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller

Yuichi Noge; Masahito Shoyama; Mingcong Deng

doi:10.1109/ECCE-Asia49820.2021.9478986

Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller

Yuichi Noge, Masahito Shoyama, Mingcong Deng

エネルギー応用システム工学

研究成果: Chapter in Book/Report/Conference proceeding › Conference contribution

抄録

This paper investigates an active gate driver for a large capacity multi-chip SiC-MOSFET power module. The active gate driver utilizes the reactive voltage of the source wire inductance as the negative feedback signal of the gate voltage. In addition, the feedback stabilization design is included in the circuit. The switching characteristics of the conventional resistive gate driver and the active gate driver are experimentally investigated by a double pulse test setup. The switching setup condition is 800 V / 300 A. This paper describes the construction of the active gate driver circuit and the experimental results. The over-shoot and ringing of the Vds and Is are reduced by using the active gate driver. In addition, the switching loss is simultaneously reduced.

本文言語	英語
ホスト出版物のタイトル	Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	1350-1353
ページ数	4
ISBN（電子版）	9781728163444
DOI	https://doi.org/10.1109/ECCE-Asia49820.2021.9478986
出版ステータス	出版済み - 5 24 2021
イベント	12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 - Virtual, Singapore, シンガポール継続期間: 5 24 2021 → 5 27 2021

出版物シリーズ

名前	Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021

会議

会議	12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
国/地域	シンガポール
City	Virtual, Singapore
Period	5/24/21 → 5/27/21

All Science Journal Classification (ASJC) codes

制御と最適化
エネルギー工学および電力技術
電子工学および電気工学
機械工学

文献へのアクセス

10.1109/ECCE-Asia49820.2021.9478986

他のファイルとリンク

引用スタイル

Noge, Y., Shoyama, M., & Deng, M. (2021). Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller. In Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 (pp. 1350-1353). [9478986] (Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE-Asia49820.2021.9478986

Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller. / Noge, Yuichi ; Shoyama, Masahito; Deng, Mingcong.

Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 1350-1353 9478986 (Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021).

研究成果: Chapter in Book/Report/Conference proceeding › Conference contribution

Noge, Y , Shoyama, M & Deng, M 2021, Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller. in Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021., 9478986, Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021, Institute of Electrical and Electronics Engineers Inc., pp. 1350-1353, 12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021, Virtual, Singapore, シンガポール, 5/24/21. https://doi.org/10.1109/ECCE-Asia49820.2021.9478986

Noge Y , Shoyama M, Deng M. Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller. In Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 1350-1353. 9478986. (Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021). https://doi.org/10.1109/ECCE-Asia49820.2021.9478986

Noge, Yuichi ; Shoyama, Masahito ; Deng, Mingcong. / Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller. Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 1350-1353 (Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021).

@inproceedings{4cbcbe073e02475ca56057524a41061e,

title = "Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller",

abstract = "This paper investigates an active gate driver for a large capacity multi-chip SiC-MOSFET power module. The active gate driver utilizes the reactive voltage of the source wire inductance as the negative feedback signal of the gate voltage. In addition, the feedback stabilization design is included in the circuit. The switching characteristics of the conventional resistive gate driver and the active gate driver are experimentally investigated by a double pulse test setup. The switching setup condition is 800 V / 300 A. This paper describes the construction of the active gate driver circuit and the experimental results. The over-shoot and ringing of the Vds and Is are reduced by using the active gate driver. In addition, the switching loss is simultaneously reduced.",

author = "Yuichi Noge and Masahito Shoyama and Mingcong Deng",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 ; Conference date: 24-05-2021 Through 27-05-2021",

year = "2021",

month = may,

day = "24",

doi = "10.1109/ECCE-Asia49820.2021.9478986",

language = "English",

series = "Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1350--1353",

booktitle = "Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021",

address = "United States",

}

TY - GEN

T1 - Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller

AU - Noge, Yuichi

AU - Shoyama, Masahito

AU - Deng, Mingcong

PY - 2021/5/24

Y1 - 2021/5/24

N2 - This paper investigates an active gate driver for a large capacity multi-chip SiC-MOSFET power module. The active gate driver utilizes the reactive voltage of the source wire inductance as the negative feedback signal of the gate voltage. In addition, the feedback stabilization design is included in the circuit. The switching characteristics of the conventional resistive gate driver and the active gate driver are experimentally investigated by a double pulse test setup. The switching setup condition is 800 V / 300 A. This paper describes the construction of the active gate driver circuit and the experimental results. The over-shoot and ringing of the Vds and Is are reduced by using the active gate driver. In addition, the switching loss is simultaneously reduced.

AB - This paper investigates an active gate driver for a large capacity multi-chip SiC-MOSFET power module. The active gate driver utilizes the reactive voltage of the source wire inductance as the negative feedback signal of the gate voltage. In addition, the feedback stabilization design is included in the circuit. The switching characteristics of the conventional resistive gate driver and the active gate driver are experimentally investigated by a double pulse test setup. The switching setup condition is 800 V / 300 A. This paper describes the construction of the active gate driver circuit and the experimental results. The over-shoot and ringing of the Vds and Is are reduced by using the active gate driver. In addition, the switching loss is simultaneously reduced.

UR - http://www.scopus.com/inward/record.url?scp=85114202001&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85114202001&partnerID=8YFLogxK

U2 - 10.1109/ECCE-Asia49820.2021.9478986

DO - 10.1109/ECCE-Asia49820.2021.9478986

M3 - Conference contribution

AN - SCOPUS:85114202001

T3 - Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021

SP - 1350

EP - 1353

BT - Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021

Y2 - 24 May 2021 through 27 May 2021

ER -

Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller

抄録

出版物シリーズ

会議

All Science Journal Classification (ASJC) codes

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル