TY - GEN
T1 - Active Gate Driver for High Power SiC-MOSFET Module with Source Current Feedback and P-D controller
AU - Noge, Yuichi
AU - Shoyama, Masahito
AU - Deng, Mingcong
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/5/24
Y1 - 2021/5/24
N2 - This paper investigates an active gate driver for a large capacity multi-chip SiC-MOSFET power module. The active gate driver utilizes the reactive voltage of the source wire inductance as the negative feedback signal of the gate voltage. In addition, the feedback stabilization design is included in the circuit. The switching characteristics of the conventional resistive gate driver and the active gate driver are experimentally investigated by a double pulse test setup. The switching setup condition is 800 V / 300 A. This paper describes the construction of the active gate driver circuit and the experimental results. The over-shoot and ringing of the Vds and Is are reduced by using the active gate driver. In addition, the switching loss is simultaneously reduced.
AB - This paper investigates an active gate driver for a large capacity multi-chip SiC-MOSFET power module. The active gate driver utilizes the reactive voltage of the source wire inductance as the negative feedback signal of the gate voltage. In addition, the feedback stabilization design is included in the circuit. The switching characteristics of the conventional resistive gate driver and the active gate driver are experimentally investigated by a double pulse test setup. The switching setup condition is 800 V / 300 A. This paper describes the construction of the active gate driver circuit and the experimental results. The over-shoot and ringing of the Vds and Is are reduced by using the active gate driver. In addition, the switching loss is simultaneously reduced.
UR - http://www.scopus.com/inward/record.url?scp=85114202001&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85114202001&partnerID=8YFLogxK
U2 - 10.1109/ECCE-Asia49820.2021.9478986
DO - 10.1109/ECCE-Asia49820.2021.9478986
M3 - Conference contribution
AN - SCOPUS:85114202001
T3 - Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
SP - 1350
EP - 1353
BT - Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
Y2 - 24 May 2021 through 27 May 2021
ER -