Active multi-mode-interferometer semiconductor optical amplifier

K. Hamamoto; E. Gini; C. Holtmann; H. Melchior; S. Sudo; K. Mori; T. Sasaki; M. Yamaguchi

doi:10.1049/el:20000884

Active multi-mode-interferometer semiconductor optical amplifier

K. Hamamoto, E. Gini, C. Holtmann, H. Melchior, S. Sudo, K. Mori, T. Sasaki, M. Yamaguchi

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

11 被引用数 (Scopus)

抄録

By exploiting the active multimode interferometer concept, semiconductor optical amplifiers with improvements in gain of 2 dB and in saturation output power of 5 dB were realized in an InGasAsP active layer on InP. This new concept enhances the active are while maintaining a regular single-transverse-mode output, with a relatively simple device structure.

本文言語	英語
ページ（範囲）	1218-1220
ページ数	3
ジャーナル	Electronics Letters
巻	36
号	14
DOI	https://doi.org/10.1049/el:20000884
出版ステータス	出版済み - 7月 6 2000
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

電子工学および電気工学

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10.1049/el:20000884

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@article{109460899f61436da307c6898d8281c4,

title = "Active multi-mode-interferometer semiconductor optical amplifier",

abstract = "By exploiting the active multimode interferometer concept, semiconductor optical amplifiers with improvements in gain of 2 dB and in saturation output power of 5 dB were realized in an InGasAsP active layer on InP. This new concept enhances the active are while maintaining a regular single-transverse-mode output, with a relatively simple device structure.",

author = "K. Hamamoto and E. Gini and C. Holtmann and H. Melchior and S. Sudo and K. Mori and T. Sasaki and M. Yamaguchi",

year = "2000",

month = jul,

day = "6",

doi = "10.1049/el:20000884",

language = "English",

volume = "36",

pages = "1218--1220",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "14",

}

TY - JOUR

T1 - Active multi-mode-interferometer semiconductor optical amplifier

AU - Hamamoto, K.

AU - Gini, E.

AU - Holtmann, C.

AU - Melchior, H.

AU - Sudo, S.

AU - Mori, K.

AU - Sasaki, T.

AU - Yamaguchi, M.

PY - 2000/7/6

Y1 - 2000/7/6

N2 - By exploiting the active multimode interferometer concept, semiconductor optical amplifiers with improvements in gain of 2 dB and in saturation output power of 5 dB were realized in an InGasAsP active layer on InP. This new concept enhances the active are while maintaining a regular single-transverse-mode output, with a relatively simple device structure.

AB - By exploiting the active multimode interferometer concept, semiconductor optical amplifiers with improvements in gain of 2 dB and in saturation output power of 5 dB were realized in an InGasAsP active layer on InP. This new concept enhances the active are while maintaining a regular single-transverse-mode output, with a relatively simple device structure.

UR - http://www.scopus.com/inward/record.url?scp=0033701552&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033701552&partnerID=8YFLogxK

U2 - 10.1049/el:20000884

DO - 10.1049/el:20000884

M3 - Article

AN - SCOPUS:0033701552

VL - 36

SP - 1218

EP - 1220

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 14

ER -

Active multi-mode-interferometer semiconductor optical amplifier

抄録

!!!All Science Journal Classification (ASJC) codes

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