Addition of PEG-thiol to Cu electroless plating bath for realizing perfect conformal deposition in through-Si via holes for 3-D integration

F. Inoue, T. Yokoyama, S. Tanaka, K. Yamamoto, S. Shingubara

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

3 被引用数 (Scopus)

抄録

Cu electroless plating is one of the most promising methods to form a seed layer in TSV filling by Cu electroplating for 3-D integration. However, for increasing aspect ratios of TSVs, the uniformity of the Cu thickness at the sidewall of TSVs becomes poorer due to consumption of Cu ions and reducing agents near the entrance of TSVs. In this study, we have studied the addition of PEG-thiol to an electroless Cu plating bath with a reducing agent of glyoxylic acid. With this method we achieved near-conformal deposition of Cu for TSVs with diameters of 4 and 10 μm and 40 μm depth. The Cu thickness of the TSV sidewall remained constant with depth even for the high aspect ratio TSVs. This method is very effective for a formation of a thin Cu seed layer prior to the Cu electroplating process of TSV-filling.

本文言語英語
ホスト出版物のタイトルProcessing, Materials, and Integration of Damascene and 3D Interconnects
出版社Electrochemical Society Inc.
ページ31-36
ページ数6
38
ISBN(印刷版)9781566778121
DOI
出版ステータス出版済み - 2009
外部発表はい

出版物シリーズ

名前ECS Transactions
番号38
25
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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