抜粋
Al doping of 4H-SiC with high surface concentration and deep depth profile is found to be realized by irradiating single-pulse excimer laser to an Al film deposited on the surface. Optical emission spectra suggest that high-temperature molten Al is produced behind the laser-generated high-density Al plasma and Al is diffused from the molten Al into 4H-SiC. The Al doping depth reaches to ~200 nm by irradiating a single laser pulse. A pn junction diode fabricated by the doping with the molten Al shows on/off ratio over 10 orders of magnitude.
| 元の言語 | 英語 |
|---|---|
| ホスト出版物のタイトル | Silicon Carbide and Related Materials 2015 |
| 編集者 | Mario Saggio, Fabrizio Roccaforte, Filippo Giannazzo, Danilo Crippa, Francesco La Via, Roberta Nipoti |
| 出版者 | Trans Tech Publications Ltd |
| ページ | 527-530 |
| ページ数 | 4 |
| ISBN（印刷物） | 9783035710427 |
| DOI | |
| 出版物ステータス | 出版済み - 1 1 2016 |
| イベント | 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, イタリア 継続期間: 10 4 2015 → 10 9 2015 |
出版物シリーズ
| 名前 | Materials Science Forum |
|---|---|
| 巻 | 858 |
| ISSN（印刷物） | 0255-5476 |
その他
| その他 | 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 |
|---|---|
| 国 | イタリア |
| 市 | Sicily |
| 期間 | 10/4/15 → 10/9/15 |
フィンガープリント
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
これを引用
Ikeda, A., Sumina, R., Ikenoue, H., & Asano, T. (2016). Al doping from laser irradiated Al film deposited on 4H-SiC. ： M. Saggio, F. Roccaforte, F. Giannazzo, D. Crippa, F. La Via, & R. Nipoti (版), Silicon Carbide and Related Materials 2015 (pp. 527-530). (Materials Science Forum; 巻数 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.527