Al doping from laser irradiated Al film deposited on 4H-SiC

Akihiro Ikeda, Rikuho Sumina, Hiroshi Ikenoue, Tanemasa Asano

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

抜粋

Al doping of 4H-SiC with high surface concentration and deep depth profile is found to be realized by irradiating single-pulse excimer laser to an Al film deposited on the surface. Optical emission spectra suggest that high-temperature molten Al is produced behind the laser-generated high-density Al plasma and Al is diffused from the molten Al into 4H-SiC. The Al doping depth reaches to ~200 nm by irradiating a single laser pulse. A pn junction diode fabricated by the doping with the molten Al shows on/off ratio over 10 orders of magnitude.

元の言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2015
編集者Mario Saggio, Fabrizio Roccaforte, Filippo Giannazzo, Danilo Crippa, Francesco La Via, Roberta Nipoti
出版者Trans Tech Publications Ltd
ページ527-530
ページ数4
ISBN(印刷物)9783035710427
DOI
出版物ステータス出版済み - 1 1 2016
イベント16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, イタリア
継続期間: 10 4 201510 9 2015

出版物シリーズ

名前Materials Science Forum
858
ISSN(印刷物)0255-5476

その他

その他16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
イタリア
Sicily
期間10/4/1510/9/15

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Ikeda, A., Sumina, R., Ikenoue, H., & Asano, T. (2016). Al doping from laser irradiated Al film deposited on 4H-SiC. : M. Saggio, F. Roccaforte, F. Giannazzo, D. Crippa, F. La Via, & R. Nipoti (版), Silicon Carbide and Related Materials 2015 (pp. 527-530). (Materials Science Forum; 巻数 858). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.858.527