Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is required to achieve high speed thin-film transistors and high-efficiency thin-film solar cells. For this purpose, we have developed an advanced Al-induced crystallization (AIC) technique by controlling the interfacial oxide layers. As a results, homogeneous and large-grained (>10 μm) AIC growth was achieved for samples with the whole Ge fractions (0-100%). In addition, we evaluated crystal orientation of the poly-SiGe and discuss the growth mechanism.
|寄稿の翻訳タイトル||Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism|
|ジャーナル||IEICE technical report|
|出版ステータス||出版済み - 4 16 2010|