AlGaAs epitaxial growth on (111)B substrates by metalorganic vapor-phase epitaxy

Kazutoshi Kato, Yuji Hasumi, Atsuo Kozen, Jiro Temmyo

研究成果: Contribution to journalArticle査読

18 被引用数 (Scopus)

抄録

AlGaAs epitaxial layers were grown on (111)B-oriented GaAs substrates by metalorganic vapor-phase epitaxy (MOVPE). Mirrorlike surfaces can be obtained with a growth temperature of 875-900°C and a V/III ratio of 10-20, while a high density of hillocks appears with lower temperatures and/or larger V/III ratios. Hillock density is reduced by introducing misorientation on (111)B substrates. In this case, however, macrosteps appear on the surface when the misorientation angle is larger than 0.2°. Low-temperature photoluminescence indicates that single quantum wells can be formed on (111)B substrates by using MOVPE.

本文言語英語
ページ(範囲)1947-1951
ページ数5
ジャーナルJournal of Applied Physics
65
5
DOI
出版ステータス出版済み - 1989
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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