AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

T. Watanabe, J. Ohta, T. Kondo, M. Ohashi, K. Ueno, A. Kobayashi, H. Fujioka

研究成果: ジャーナルへの寄稿記事

21 引用 (Scopus)

抄録

GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm2/Vs and a sheet carrier density of 1.3×1013cm-2 was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

元の言語英語
記事番号182111
ジャーナルApplied Physics Letters
104
発行部数18
DOI
出版物ステータス出版済み - 5 5 2014
外部発表Yes

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sputtering
crack initiation
high electron mobility transistors
electron gas
fabrication
electronics
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Watanabe, T., Ohta, J., Kondo, T., Ohashi, M., Ueno, K., Kobayashi, A., & Fujioka, H. (2014). AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering. Applied Physics Letters, 104(18), [182111]. https://doi.org/10.1063/1.4876449

AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering. / Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

:: Applied Physics Letters, 巻 104, 番号 18, 182111, 05.05.2014.

研究成果: ジャーナルへの寄稿記事

Watanabe, T, Ohta, J, Kondo, T, Ohashi, M, Ueno, K, Kobayashi, A & Fujioka, H 2014, 'AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering', Applied Physics Letters, 巻. 104, 番号 18, 182111. https://doi.org/10.1063/1.4876449
Watanabe, T. ; Ohta, J. ; Kondo, T. ; Ohashi, M. ; Ueno, K. ; Kobayashi, A. ; Fujioka, H. / AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering. :: Applied Physics Letters. 2014 ; 巻 104, 番号 18.
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AU - Watanabe, T.

AU - Ohta, J.

AU - Kondo, T.

AU - Ohashi, M.

AU - Ueno, K.

AU - Kobayashi, A.

AU - Fujioka, H.

PY - 2014/5/5

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