SIS (Superconductor/Insulator/Superconductor) structures consisting of high-Tc YBa2Cu3Ox (YBCO) require epitaxial interfaces. To devise these interfaces, we have fabricated the SIS structure using NdGaO3 lattice-matched with YBCO as a substrate and an insulating layer. SIS structures were examined by Reflection High Energy Electron Diffraction (RHEED), X-ray Reflection Diffractometry (XRD) and Scanning Electron Microscopy (SEM). Results show that all epitaxial SIS structures were successfully fabricated.
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