Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

A new gate structure in the trench-gate insulated-gate bipolar transistor (IGBT) design is proposed and analyzed for power-loss reduction and the suppression of electromagnetic-interference (EMI) noise. Although the turn-off loss and the ON-state voltage drop {V}_{\text {ce(sat)}} are improved by the injection-enhancement (IE) effect, the IE effect caused dynamic avalanche that limits the turn-off loss reduction. In addition, EMI noise is induced by high dI/dt and large surge current due to the negative gate capacitance. This article shows that the dynamic avalanche and the negative gate capacitance can be suppressed by the management of the electric field concentration and hole current flow around the trench gate by the proposed alternated trench-gate (AT) IGBT structure, and both low power loss and good switching controllability can be obtained. The device simulation results show that the AT-IGBT improves the turn-on surge current {I}_{\text {surge}} - {V}_{\text {ce(sat)}} tradeoff compared with the conventional IGBTs.

本文言語英語
論文番号9127192
ページ(範囲)3285-3290
ページ数6
ジャーナルIEEE Transactions on Electron Devices
67
8
DOI
出版ステータス出版済み - 8 2020

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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