Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution

Daichi Marui, Akihiro Ikeda, Koji Nishi, Hiroshi Ikenoue, Tanemasa Asano

研究成果: ジャーナルへの寄稿記事

14 引用 (Scopus)

抄録

We have found that aluminum doping into 4H-SiC is performed by irradiating excimer laser light to 4H-SiC immersed in aluminum chloride solution. Aluminum is introduced in SiC at the concentration of over 1 × 10 20cm-3 near the surface while, chlorine hardly diffuses into 4H-SiC. After the laser irradiation in aluminum chloride solution, the resistance of the laser-irradiated region decreases with increasing laser fluence. Hall effect measurement shows that the laser irradiation produces a p-type layer and that its sheet carrier concentration is 2.14 × 10 11cm-2. In addition, we produce a pn junction by doping the surface of n-type 4H-SiC and by aluminum doping. The pn junction shows rectifying characteristics whose on/off ratio is about 7 decades and ideality factor is 1.15. This technique is one of the strong candidate local doping techniques for SiC.

元の言語英語
記事番号06JF03
ジャーナルJapanese Journal of Applied Physics
53
発行部数6 SPEC. ISSUE
DOI
出版物ステータス出版済み - 1 1 2014

Fingerprint

aluminum chlorides
Aluminum chloride
Excimer lasers
excimer lasers
Doping (additives)
Irradiation
aluminum
Aluminum
irradiation
Laser beam effects
lasers
Lasers
Hall effect
Chlorine
Carrier concentration
chlorine
fluence

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution. / Marui, Daichi; Ikeda, Akihiro; Nishi, Koji; Ikenoue, Hiroshi; Asano, Tanemasa.

:: Japanese Journal of Applied Physics, 巻 53, 番号 6 SPEC. ISSUE, 06JF03, 01.01.2014.

研究成果: ジャーナルへの寄稿記事

Marui, Daichi ; Ikeda, Akihiro ; Nishi, Koji ; Ikenoue, Hiroshi ; Asano, Tanemasa. / Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution. :: Japanese Journal of Applied Physics. 2014 ; 巻 53, 番号 6 SPEC. ISSUE.
@article{806da95ee2a24ca5bf1e0a27c37acffe,
title = "Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution",
abstract = "We have found that aluminum doping into 4H-SiC is performed by irradiating excimer laser light to 4H-SiC immersed in aluminum chloride solution. Aluminum is introduced in SiC at the concentration of over 1 × 10 20cm-3 near the surface while, chlorine hardly diffuses into 4H-SiC. After the laser irradiation in aluminum chloride solution, the resistance of the laser-irradiated region decreases with increasing laser fluence. Hall effect measurement shows that the laser irradiation produces a p-type layer and that its sheet carrier concentration is 2.14 × 10 11cm-2. In addition, we produce a pn junction by doping the surface of n-type 4H-SiC and by aluminum doping. The pn junction shows rectifying characteristics whose on/off ratio is about 7 decades and ideality factor is 1.15. This technique is one of the strong candidate local doping techniques for SiC.",
author = "Daichi Marui and Akihiro Ikeda and Koji Nishi and Hiroshi Ikenoue and Tanemasa Asano",
year = "2014",
month = "1",
day = "1",
doi = "10.7567/JJAP.53.06JF03",
language = "English",
volume = "53",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "6 SPEC. ISSUE",

}

TY - JOUR

T1 - Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution

AU - Marui, Daichi

AU - Ikeda, Akihiro

AU - Nishi, Koji

AU - Ikenoue, Hiroshi

AU - Asano, Tanemasa

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We have found that aluminum doping into 4H-SiC is performed by irradiating excimer laser light to 4H-SiC immersed in aluminum chloride solution. Aluminum is introduced in SiC at the concentration of over 1 × 10 20cm-3 near the surface while, chlorine hardly diffuses into 4H-SiC. After the laser irradiation in aluminum chloride solution, the resistance of the laser-irradiated region decreases with increasing laser fluence. Hall effect measurement shows that the laser irradiation produces a p-type layer and that its sheet carrier concentration is 2.14 × 10 11cm-2. In addition, we produce a pn junction by doping the surface of n-type 4H-SiC and by aluminum doping. The pn junction shows rectifying characteristics whose on/off ratio is about 7 decades and ideality factor is 1.15. This technique is one of the strong candidate local doping techniques for SiC.

AB - We have found that aluminum doping into 4H-SiC is performed by irradiating excimer laser light to 4H-SiC immersed in aluminum chloride solution. Aluminum is introduced in SiC at the concentration of over 1 × 10 20cm-3 near the surface while, chlorine hardly diffuses into 4H-SiC. After the laser irradiation in aluminum chloride solution, the resistance of the laser-irradiated region decreases with increasing laser fluence. Hall effect measurement shows that the laser irradiation produces a p-type layer and that its sheet carrier concentration is 2.14 × 10 11cm-2. In addition, we produce a pn junction by doping the surface of n-type 4H-SiC and by aluminum doping. The pn junction shows rectifying characteristics whose on/off ratio is about 7 decades and ideality factor is 1.15. This technique is one of the strong candidate local doping techniques for SiC.

UR - http://www.scopus.com/inward/record.url?scp=84903275377&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903275377&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.06JF03

DO - 10.7567/JJAP.53.06JF03

M3 - Article

AN - SCOPUS:84903275377

VL - 53

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 SPEC. ISSUE

M1 - 06JF03

ER -