Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy

L. B. Rowland, R. S. Kern, S. Tanaka, Robert F. Davis

研究成果: ジャーナルへの寄稿記事

32 引用 (Scopus)

抄録

Pseudomorphic structures containing β(3C)-SiC and 2H-AlN have been grown on vicinal α(6H)-SiC(0001) at 1050°C by plasma-assisted, gas-source molecular beam epitaxy. Reflection-high energy electron diffraction and cross-sectional high-resolution transmission electron microscopy showed all layers to be monocrystalline. The AlN layers were uniform in thickness. Defects in these layers initiated at steps on the 6H-SiC film. The 3C-SiC layers contained a high density of stacking faults and microtwins caused primarily by the interfacial stresses generated by the mismatch in lattice parameters between AlN and β-SiC coupled with the very low stacking fault energy of SiC. This is the first report of the deposition of single crystal SiC/AlN/SiC thin film heterostructures on any substrate as well as the first report of the epitaxial growth of single crystal layers of binary materials with three different crystal structures.

元の言語英語
ページ(範囲)3333-3335
ページ数3
ジャーナルApplied Physics Letters
62
発行部数25
DOI
出版物ステータス出版済み - 12 1 1993
外部発表Yes

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aluminum nitrides
silicon carbides
molecular beam epitaxy
gases
stacking fault energy
single crystals
crystal defects
high energy electrons
lattice parameters
electron diffraction
transmission electron microscopy
crystal structure
high resolution
defects
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy. / Rowland, L. B.; Kern, R. S.; Tanaka, S.; Davis, Robert F.

:: Applied Physics Letters, 巻 62, 番号 25, 01.12.1993, p. 3333-3335.

研究成果: ジャーナルへの寄稿記事

@article{a60178ce646c4d7d833196a3939e28e9,
title = "Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy",
abstract = "Pseudomorphic structures containing β(3C)-SiC and 2H-AlN have been grown on vicinal α(6H)-SiC(0001) at 1050°C by plasma-assisted, gas-source molecular beam epitaxy. Reflection-high energy electron diffraction and cross-sectional high-resolution transmission electron microscopy showed all layers to be monocrystalline. The AlN layers were uniform in thickness. Defects in these layers initiated at steps on the 6H-SiC film. The 3C-SiC layers contained a high density of stacking faults and microtwins caused primarily by the interfacial stresses generated by the mismatch in lattice parameters between AlN and β-SiC coupled with the very low stacking fault energy of SiC. This is the first report of the deposition of single crystal SiC/AlN/SiC thin film heterostructures on any substrate as well as the first report of the epitaxial growth of single crystal layers of binary materials with three different crystal structures.",
author = "Rowland, {L. B.} and Kern, {R. S.} and S. Tanaka and Davis, {Robert F.}",
year = "1993",
month = "12",
day = "1",
doi = "10.1063/1.109062",
language = "English",
volume = "62",
pages = "3333--3335",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy

AU - Rowland, L. B.

AU - Kern, R. S.

AU - Tanaka, S.

AU - Davis, Robert F.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - Pseudomorphic structures containing β(3C)-SiC and 2H-AlN have been grown on vicinal α(6H)-SiC(0001) at 1050°C by plasma-assisted, gas-source molecular beam epitaxy. Reflection-high energy electron diffraction and cross-sectional high-resolution transmission electron microscopy showed all layers to be monocrystalline. The AlN layers were uniform in thickness. Defects in these layers initiated at steps on the 6H-SiC film. The 3C-SiC layers contained a high density of stacking faults and microtwins caused primarily by the interfacial stresses generated by the mismatch in lattice parameters between AlN and β-SiC coupled with the very low stacking fault energy of SiC. This is the first report of the deposition of single crystal SiC/AlN/SiC thin film heterostructures on any substrate as well as the first report of the epitaxial growth of single crystal layers of binary materials with three different crystal structures.

AB - Pseudomorphic structures containing β(3C)-SiC and 2H-AlN have been grown on vicinal α(6H)-SiC(0001) at 1050°C by plasma-assisted, gas-source molecular beam epitaxy. Reflection-high energy electron diffraction and cross-sectional high-resolution transmission electron microscopy showed all layers to be monocrystalline. The AlN layers were uniform in thickness. Defects in these layers initiated at steps on the 6H-SiC film. The 3C-SiC layers contained a high density of stacking faults and microtwins caused primarily by the interfacial stresses generated by the mismatch in lattice parameters between AlN and β-SiC coupled with the very low stacking fault energy of SiC. This is the first report of the deposition of single crystal SiC/AlN/SiC thin film heterostructures on any substrate as well as the first report of the epitaxial growth of single crystal layers of binary materials with three different crystal structures.

UR - http://www.scopus.com/inward/record.url?scp=36449005199&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449005199&partnerID=8YFLogxK

U2 - 10.1063/1.109062

DO - 10.1063/1.109062

M3 - Article

AN - SCOPUS:36449005199

VL - 62

SP - 3333

EP - 3335

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

ER -