Amorphization induced by low-energy ion irradiation in silicon

Dong Ju Bai, Tomohiro Kawase, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

研究成果: ジャーナルへの寄稿学術誌査読

1 被引用数 (Scopus)

抄録

Amorphization of silicon crystals irradiated with low-energy (10-25 keV) Ar+ beams at temperature in the range of 30-600°C has been studied. Thickness of the damaged layer was estimated by the ion-bombardment-enhanced selective etching (IBESE) technique. Critical dose for the amorphization was estimated to be ∼ 5 × 1013 ions/cm2 for irradiation of 10 and 20 keV Ar+ at 30°C. Comparison between the damaged layer thickness and results of the TRIM simulation shows that the etching stops at the depth where density of the deposited energy is a constant value. For irradiation temperature of 380°C and 400°C, no amorphized layer was observed after irradiation with 20 keV Ar+ to dose of 5 × 1014 and 2 × 1015 ions/cm2, respectively. The damaged layers disappeared after annealing at temperature above 400°C, and activation energy for the recovery was estimated to be 0.33 eV. From the value of the activation energy, we speculate that the recovery process of radiation-induced defects should be controlled by migration of vacancies.

本文言語英語
ページ(範囲)163-166
ページ数4
ジャーナルResearch Reports on Information Science and Electrical Engineering of Kyushu University
2
1
出版ステータス出版済み - 3月 1997

!!!All Science Journal Classification (ASJC) codes

  • コンピュータ サイエンス(全般)
  • 電子工学および電気工学

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