Amorphous silicon thin film transistors using Schottky barrier contacts for source and drain have been studied. It is expected that a-Si SBTFT can utilize not only the conductivity change at the surface of a-Si but also the nonlinear current increase through the Schottky barrier at the source contact in reverse bias directions. Schottky barrier contacts for source and drain make the fabrication processes easier and reduce the OFF current in comparison with that of conventional TFT's with ohmic contacts for source and drain.
|ホスト出版物のタイトル||Technology Reports of the Osaka University|
|出版ステータス||出版済み - 1 1 1992|
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