Amorphous silicon TFT using Schottky barrier contacts for source and drain

Akihiro Nakae, Reiji Hattori, Junji Shirafuji

研究成果: Chapter in Book/Report/Conference proceedingChapter

抄録

Amorphous silicon thin film transistors using Schottky barrier contacts for source and drain have been studied. It is expected that a-Si SBTFT can utilize not only the conductivity change at the surface of a-Si but also the nonlinear current increase through the Schottky barrier at the source contact in reverse bias directions. Schottky barrier contacts for source and drain make the fabrication processes easier and reduce the OFF current in comparison with that of conventional TFT's with ohmic contacts for source and drain.

本文言語英語
ホスト出版物のタイトルTechnology Reports of the Osaka University
ページ261-267
ページ数7
42
2101-23
出版ステータス出版済み - 1 1 1992
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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