Amphoteric property of electrically active nickel in silicon

Hajime Kitagawa, Hiroshi Nakashima

    研究成果: Contribution to journalArticle査読

    31 被引用数 (Scopus)

    抄録

    Deep levels in nickel-doped n- and p-type silicon have been studied by the Hall effect and deep level transient spectroscopy (DLTS) under various diffusion and isothermal annealing conditions. It was found that nickel introduces an acceptor level of 0.47±0.04 eV from the conduction band and a donor level of 0.18±0.02 eV from the valence band, and that the concentrations of the two levels are practically identical. Isothermal annealing experiments have revealed stable behaviors of the two levels. The results suggest that the two levels are different charge states of the same substitutional nickel atoms in silicon.

    本文言語英語
    ページ(範囲)305-310
    ページ数6
    ジャーナルJapanese journal of applied physics
    28
    3 R
    DOI
    出版ステータス出版済み - 3 1989

    All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

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