An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO 2/GeO 2 bilayer passivation

Dong Wang, Shuta Kojima, Keita Sakamoto, Keisuke Yamamoto, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿記事

14 引用 (Scopus)

抄録

For Ge metal-insulator-semiconductor (MIS) capacitors with a GeO 2 interfacial layer, interface-state density (D it) was accurately characterized using deep-level transient spectroscopy. Elimination of the influence of slow-traps in the gate dielectric film on D it characterization is described in detail. This was achieved by optimizing the injection pulse and quiescent reverse-bias voltages at each temperature. D it values of approximately 5 × 10 10 cm -2 eV -1 were observed at around mid-gap for both the n- and p-Ge-MIS capacitors with a TiN-gate, for which an asymmetric U-shape energy distribution in D it was also observed. Furthermore, the effects of post-metallization annealing (PMA) on D it improvement and slow-trap passivation were also investigated for Al-gated p-Ge-MIS capacitors, on which the defect passivation mechanism in Al-PMA is discussed. A reasonable correspondence was also observed between gate-film quality for Al-gated p-Ge-MIS capacitors and channel mobility in Ge-p-MIS field effect transistors with the gate fabricated by the same process as for p-Ge-MIS capacitors.

元の言語英語
記事番号083707
ジャーナルJournal of Applied Physics
112
発行部数8
DOI
出版物ステータス出版済み - 10 15 2012

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MIS (semiconductors)
passivity
capacitors
spectroscopy
traps
annealing
elimination
energy distribution
field effect transistors
injection
defects
electric potential
pulses

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

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abstract = "For Ge metal-insulator-semiconductor (MIS) capacitors with a GeO 2 interfacial layer, interface-state density (D it) was accurately characterized using deep-level transient spectroscopy. Elimination of the influence of slow-traps in the gate dielectric film on D it characterization is described in detail. This was achieved by optimizing the injection pulse and quiescent reverse-bias voltages at each temperature. D it values of approximately 5 × 10 10 cm -2 eV -1 were observed at around mid-gap for both the n- and p-Ge-MIS capacitors with a TiN-gate, for which an asymmetric U-shape energy distribution in D it was also observed. Furthermore, the effects of post-metallization annealing (PMA) on D it improvement and slow-trap passivation were also investigated for Al-gated p-Ge-MIS capacitors, on which the defect passivation mechanism in Al-PMA is discussed. A reasonable correspondence was also observed between gate-film quality for Al-gated p-Ge-MIS capacitors and channel mobility in Ge-p-MIS field effect transistors with the gate fabricated by the same process as for p-Ge-MIS capacitors.",
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AU - Kojima, Shuta

AU - Sakamoto, Keita

AU - Yamamoto, Keisuke

AU - Nakashima, Hiroshi

PY - 2012/10/15

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