For Ge metal-insulator-semiconductor (MIS) capacitors with a GeO 2 interfacial layer, interface-state density (D it) was accurately characterized using deep-level transient spectroscopy. Elimination of the influence of slow-traps in the gate dielectric film on D it characterization is described in detail. This was achieved by optimizing the injection pulse and quiescent reverse-bias voltages at each temperature. D it values of approximately 5 × 10 10 cm -2 eV -1 were observed at around mid-gap for both the n- and p-Ge-MIS capacitors with a TiN-gate, for which an asymmetric U-shape energy distribution in D it was also observed. Furthermore, the effects of post-metallization annealing (PMA) on D it improvement and slow-trap passivation were also investigated for Al-gated p-Ge-MIS capacitors, on which the defect passivation mechanism in Al-PMA is discussed. A reasonable correspondence was also observed between gate-film quality for Al-gated p-Ge-MIS capacitors and channel mobility in Ge-p-MIS field effect transistors with the gate fabricated by the same process as for p-Ge-MIS capacitors.
|ジャーナル||Journal of Applied Physics|
|出版ステータス||出版済み - 10月 15 2012|
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