An effect of crystallographic distortion on carrier mobility in poly(3-hexylthiophene) thin films

研究成果: Contribution to journalArticle査読

抄録

The aggregation states and physical properties of polymers in thin films deviate from those found in the bulk. Although an effect of the thickness on the carrier mobility for thin films of poly(3-hexylthiophene) (P3HT) has been widely studied, there is a lack of discussion in terms of crystallographic distortion. Here, we demonstrate how the out-of-plane hole mobility in P3HT, which is a typical semiconducting polymer, changes with decreasing film thickness. Time-of-flight measurements with an analysis using the Gaussian disorder model revealed that the zero-field out-of-plane hole mobility decreased with decreasing thickness because of an increase in the energetical and spatial distribution of hopping sites. Grazing incidence wide-angle x-ray diffraction measurements revealed that such distributions of charge carriers were induced by the crystallographic distortion of P3HT in the thin films.

本文言語英語
論文番号181601
ジャーナルApplied Physics Letters
118
18
DOI
出版ステータス出版済み - 5 3 2021

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

フィンガープリント

「An effect of crystallographic distortion on carrier mobility in poly(3-hexylthiophene) thin films」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル