An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications

S. A.Z. Murad, Ramesh Pokharel, A. I.A. Galal, R. Sapawi, Haruichi Kanaya, K. Yoshida

研究成果: ジャーナルへの寄稿記事

34 引用 (Scopus)

抄録

This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback helps to enhance the bandwidth and improve the output wideband matching. The measurement results indicated that the input return loss S11 less than -6 dB, output return loss S22 less than -7 dB, and excellent gain flatness approximately 14.5 ±0.5 dB over the frequency range of interest. The output 1 dB compression of 7 dBm, the output third-order intercept point (OIP3) of 18 dBm, and a phase linearity property (group delay) of ± 178.5 ps across the whole band were obtained with a power consumption of 24 mW.

元の言語英語
記事番号5504002
ページ(範囲)510-512
ページ数3
ジャーナルIEEE Microwave and Wireless Components Letters
20
発行部数9
DOI
出版物ステータス出版済み - 9 1 2010

Fingerprint

flatness
power amplifiers
Power amplifiers
Ultra-wideband (UWB)
CMOS
shunts
Feedback
Group delay
output
Electric power utilization
Bandwidth
inductors
linearity
frequency ranges
broadband
bandwidth

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications. / Murad, S. A.Z.; Pokharel, Ramesh; Galal, A. I.A.; Sapawi, R.; Kanaya, Haruichi; Yoshida, K.

:: IEEE Microwave and Wireless Components Letters, 巻 20, 番号 9, 5504002, 01.09.2010, p. 510-512.

研究成果: ジャーナルへの寄稿記事

Murad, S. A.Z. ; Pokharel, Ramesh ; Galal, A. I.A. ; Sapawi, R. ; Kanaya, Haruichi ; Yoshida, K. / An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications. :: IEEE Microwave and Wireless Components Letters. 2010 ; 巻 20, 番号 9. pp. 510-512.
@article{dad55acf0a914647ac727881b3bea8c1,
title = "An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications",
abstract = "This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback helps to enhance the bandwidth and improve the output wideband matching. The measurement results indicated that the input return loss S11 less than -6 dB, output return loss S22 less than -7 dB, and excellent gain flatness approximately 14.5 ±0.5 dB over the frequency range of interest. The output 1 dB compression of 7 dBm, the output third-order intercept point (OIP3) of 18 dBm, and a phase linearity property (group delay) of ± 178.5 ps across the whole band were obtained with a power consumption of 24 mW.",
author = "Murad, {S. A.Z.} and Ramesh Pokharel and Galal, {A. I.A.} and R. Sapawi and Haruichi Kanaya and K. Yoshida",
year = "2010",
month = "9",
day = "1",
doi = "10.1109/LMWC.2010.2052593",
language = "English",
volume = "20",
pages = "510--512",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications

AU - Murad, S. A.Z.

AU - Pokharel, Ramesh

AU - Galal, A. I.A.

AU - Sapawi, R.

AU - Kanaya, Haruichi

AU - Yoshida, K.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback helps to enhance the bandwidth and improve the output wideband matching. The measurement results indicated that the input return loss S11 less than -6 dB, output return loss S22 less than -7 dB, and excellent gain flatness approximately 14.5 ±0.5 dB over the frequency range of interest. The output 1 dB compression of 7 dBm, the output third-order intercept point (OIP3) of 18 dBm, and a phase linearity property (group delay) of ± 178.5 ps across the whole band were obtained with a power consumption of 24 mW.

AB - This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain at the upper end of the desired band, a shunt and a series peaking inductors with a resistive feedback at the second stage to obtain the wider and flat gain, while shunt-shunt feedback helps to enhance the bandwidth and improve the output wideband matching. The measurement results indicated that the input return loss S11 less than -6 dB, output return loss S22 less than -7 dB, and excellent gain flatness approximately 14.5 ±0.5 dB over the frequency range of interest. The output 1 dB compression of 7 dBm, the output third-order intercept point (OIP3) of 18 dBm, and a phase linearity property (group delay) of ± 178.5 ps across the whole band were obtained with a power consumption of 24 mW.

UR - http://www.scopus.com/inward/record.url?scp=77956395356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956395356&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2010.2052593

DO - 10.1109/LMWC.2010.2052593

M3 - Article

AN - SCOPUS:77956395356

VL - 20

SP - 510

EP - 512

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 9

M1 - 5504002

ER -