An in-situ X-ray topography observation of dislocations, crystal-melt interface and melting of silicon

Yuren Wang, Koichi Kakimoto

研究成果: Contribution to journalArticle査読

7 被引用数 (Scopus)

抄録

An in-situ observation on the crystal-melt interfaces, their propagations and dislocations during the melting of silicon was carried out by X-ray topography technique. The dislocation-free melting process was successfully observed through the optimization of temperature distribution in the furnace and the shape of the sample. The melting with and without dislocations near the melting zone was discussed. It was demonstrated that the crystal-melt interface was kept flat during the dislocation-free melting, while the interface was rough if an isolated dislocation appeared in the melting zone.

本文言語英語
ページ(範囲)143-146
ページ数4
ジャーナルMicroelectronic Engineering
56
1-2
DOI
出版ステータス出版済み - 5 2001

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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