We realize a nonvolatile and rewritable memory effect in an organic field-effect transistor (OFET) structure using polymethylmethacryrate (PMMA) dispersed with 10-methyl-9-phenylacridinium perchlorate (MPA+ClO4-) as a gate dielectric. Applying a voltage between a top source-drain electrode and a bottom gate electrode induces electrophoresis of two ions of MPA+ and ClO4- towards the corresponding electrodes in the memory devices. The drain currents of the memory devices markedly increase from 10- 9 A to 10- 2 A under no gate voltage condition due to the strong space charge polarization effect. Our memory devices have excellent electrical bistability and retention characteristics, i.e. the memory on/off ratio reached 107 and the drain current maintained 40% of the initial value after 104 s.
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