An organic nonvolatile memory using space charge polarization of a gate dielectric

Kodai Konno, Heisuke Sakai, Toshinori Matsushima, Hideyuki Murata

研究成果: Contribution to journalArticle査読

12 被引用数 (Scopus)

抄録

We realize a nonvolatile and rewritable memory effect in an organic field-effect transistor (OFET) structure using polymethylmethacryrate (PMMA) dispersed with 10-methyl-9-phenylacridinium perchlorate (MPA+ClO4-) as a gate dielectric. Applying a voltage between a top source-drain electrode and a bottom gate electrode induces electrophoresis of two ions of MPA+ and ClO4- towards the corresponding electrodes in the memory devices. The drain currents of the memory devices markedly increase from 10- 9 A to 10- 2 A under no gate voltage condition due to the strong space charge polarization effect. Our memory devices have excellent electrical bistability and retention characteristics, i.e. the memory on/off ratio reached 107 and the drain current maintained 40% of the initial value after 104 s.

本文言語英語
ページ(範囲)534-536
ページ数3
ジャーナルThin Solid Films
518
2
DOI
出版ステータス出版済み - 11 30 2009
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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