An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Akira Nakajima, Sin Ichi Nishizawa, Shunsuke Kubota, Rei Kayanuma, Kazuo Tsutsui, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

5 被引用数 (Scopus)

抄録

This paper gives an overview of GaN-based polarization-junction (PJ) technologies. PJ platform wafers have both high-density 2D hole gas (2DHG) and 2D electron gas (2DEG) respectively induced by negative and positive polarization charges in undoped GaN/AlGaN/GaN double heterostructures. On the platform, monolithic operations of GaN-based n-channel transistors and p-channel transistors have been demonstrated. Because of temperature independent properties of the 2DHG and 2DEG, the GaN devices can operate in wide temperature range. In addition, high voltage transistors and diode are also available on the platform by using polarization-superjunction concept.

本文言語英語
ホスト出版物のタイトル2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479984947
DOI
出版ステータス出版済み - 10 30 2015
外部発表はい
イベント37th IEEE International Symposium on Workload Characterization, IISWC 2015 - New Orleans, 米国
継続期間: 10 11 201510 14 2015

出版物シリーズ

名前2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015

その他

その他37th IEEE International Symposium on Workload Characterization, IISWC 2015
国/地域米国
CityNew Orleans
Period10/11/1510/14/15

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • コンピュータ ネットワークおよび通信
  • 電子材料、光学材料、および磁性材料

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