抄録
GaN-based p-channel devices using a two-dimensional hole gas are of interest for the realization of GaN CMOS circuits, and threshold voltage control using a back-gate is useful for the circuit design of these devices. In this paper, the back-gate effect on p-channel GaN MOSFETs on polarization-junction substrates is studied. The results show that the obtained dependence of the threshold voltage on the back-gate voltage can be derived by a model equation considering the back surface channel. Also, by comparing the measured characteristics with the simulation result under ideal conditions, it is found that the amount of interfacial charges can be quantitatively evaluated for the fabricated device.
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 061006 |
| ジャーナル | Japanese Journal of Applied Physics |
| 巻 | 58 |
| 発行部数 | 6 |
| DOI | |
| 出版物ステータス | 出版済み - 1 1 2019 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
これを引用
Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates. / Hoshii, Takuya; Nakajima, Akira; Nishizawa, Shinichi; Ohashi, Hiromichi; Kakushima, Kuniyuki; Wakabayashi, Hitoshi; Tsutsui, Kazuo.
：: Japanese Journal of Applied Physics, 巻 58, 番号 6, 061006, 01.01.2019.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates
AU - Hoshii, Takuya
AU - Nakajima, Akira
AU - Nishizawa, Shinichi
AU - Ohashi, Hiromichi
AU - Kakushima, Kuniyuki
AU - Wakabayashi, Hitoshi
AU - Tsutsui, Kazuo
PY - 2019/1/1
Y1 - 2019/1/1
N2 - GaN-based p-channel devices using a two-dimensional hole gas are of interest for the realization of GaN CMOS circuits, and threshold voltage control using a back-gate is useful for the circuit design of these devices. In this paper, the back-gate effect on p-channel GaN MOSFETs on polarization-junction substrates is studied. The results show that the obtained dependence of the threshold voltage on the back-gate voltage can be derived by a model equation considering the back surface channel. Also, by comparing the measured characteristics with the simulation result under ideal conditions, it is found that the amount of interfacial charges can be quantitatively evaluated for the fabricated device.
AB - GaN-based p-channel devices using a two-dimensional hole gas are of interest for the realization of GaN CMOS circuits, and threshold voltage control using a back-gate is useful for the circuit design of these devices. In this paper, the back-gate effect on p-channel GaN MOSFETs on polarization-junction substrates is studied. The results show that the obtained dependence of the threshold voltage on the back-gate voltage can be derived by a model equation considering the back surface channel. Also, by comparing the measured characteristics with the simulation result under ideal conditions, it is found that the amount of interfacial charges can be quantitatively evaluated for the fabricated device.
UR - http://www.scopus.com/inward/record.url?scp=85070772503&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85070772503&partnerID=8YFLogxK
U2 - 10.7567/1347-4065/ab1c78
DO - 10.7567/1347-4065/ab1c78
M3 - Article
AN - SCOPUS:85070772503
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
M1 - 061006
ER -