Analysis of charge deposition and collection caused by low energy neutrons in a 25-nm bulk cmos technology

Shin Ichiro Abe, Yukinobu Watanabe

研究成果: Contribution to journalArticle査読

10 被引用数 (Scopus)

抄録

Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above the threshold energies of (n,p) and ({\rm n}, \alpha) reactions although the production cross sections for H and He ions are smaller than the elastic scattering cross sections below 20 MeV. The SEUs induced by secondary H and He ions are influenced strongly by the size of the interaction volume considered in the simulation because the ranges of H and He ions are much longer than those of elastic recoils.

本文言語英語
論文番号6975251
ページ(範囲)3519-3526
ページ数8
ジャーナルIEEE Transactions on Nuclear Science
61
6
DOI
出版ステータス出版済み - 12 1 2014

All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学
  • 電子工学および電気工学

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