Analysis of compositional instability of InGaN by Monte Carlo simulation

Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, Akinori Koukitu

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

Relationships between growth conditions and atomic arrangements in InGaN thin films were investigated by Monte Carlo simulation incorporating data obtained from thermodynamic analyses and empirical interatomic potential calculations. The results suggest that compositional fluctuation was enhanced during the site-exchanging process instead of the adsorption process in the case of low indium input partial pressure. Moreover, it was found that no gross fluctuation in composition occurs but atomic-sized clustering occurs in thin films. The results agree with the experimental results [Smeeton et al., Appl. Phys. Lett. 83 (2003) 5419].

本文言語英語
ページ(範囲)190-192
ページ数3
ジャーナルJournal of Crystal Growth
298
SPEC. ISS
DOI
出版ステータス出版済み - 1 2007

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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