Analysis of growth velocity of SiC growth by the physical vapor transport method

Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shin Ichi Nishizawa

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Crystal growth velocity of SiC in a process of physical vapor transport was studied on the basis of numerical calculation including the effect of compressibility, convection and buoyancy effects, flow coupling between argon gas and species of Si, Si 2C and SiC 2, and the Stefan effect. Calculation in a 2D configuration was performed to clarify the effect of pressure on growth velocity. The results revealed that convection plays a role in the measured values that growers interpret as growth velocity based on a diffusion process of argon gas and species of Si, Si 2C and SiC 2.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2011, ICSCRM 2011
ページ25-28
ページ数4
DOI
出版ステータス出版済み - 5 28 2012
外部発表はい
イベント14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, 米国
継続期間: 9 11 20119 16 2011

出版物シリーズ

名前Materials Science Forum
717-720
ISSN(印刷版)0255-5476

その他

その他14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
国/地域米国
CityCleveland, OH
Period9/11/119/16/11

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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