Analysis of growth velocity of SiC growth by the physical vapor transport method

Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shinichi Nishizawa

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

Crystal growth velocity of SiC in a process of physical vapor transport was studied on the basis of numerical calculation including the effect of compressibility, convection and buoyancy effects, flow coupling between argon gas and species of Si, Si 2C and SiC 2, and the Stefan effect. Calculation in a 2D configuration was performed to clarify the effect of pressure on growth velocity. The results revealed that convection plays a role in the measured values that growers interpret as growth velocity based on a diffusion process of argon gas and species of Si, Si 2C and SiC 2.

元の言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2011, ICSCRM 2011
ページ25-28
ページ数4
DOI
出版物ステータス出版済み - 5 28 2012
イベント14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, 米国
継続期間: 9 11 20119 16 2011

出版物シリーズ

名前Materials Science Forum
717-720
ISSN(印刷物)0255-5476

その他

その他14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
米国
Cleveland, OH
期間9/11/119/16/11

Fingerprint

Argon
Vapors
vapors
Gases
Crystallization
Buoyancy
Compressibility
Crystal growth
convection
argon
compressibility effects
gases
buoyancy
crystal growth
configurations
Convection

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S., & Nishizawa, S. (2012). Analysis of growth velocity of SiC growth by the physical vapor transport method. : Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 25-28). (Materials Science Forum; 巻数 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.25

Analysis of growth velocity of SiC growth by the physical vapor transport method. / Kakimoto, Koichi; Gao, Bing; Shiramomo, Takuya; Nakano, Satoshi; Nishizawa, Shinichi.

Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. p. 25-28 (Materials Science Forum; 巻 717-720).

研究成果: 著書/レポートタイプへの貢献会議での発言

Kakimoto, K, Gao, B, Shiramomo, T, Nakano, S & Nishizawa, S 2012, Analysis of growth velocity of SiC growth by the physical vapor transport method. : Silicon Carbide and Related Materials 2011, ICSCRM 2011. Materials Science Forum, 巻. 717-720, pp. 25-28, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, 米国, 9/11/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.25
Kakimoto K, Gao B, Shiramomo T, Nakano S, Nishizawa S. Analysis of growth velocity of SiC growth by the physical vapor transport method. : Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. p. 25-28. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.25
Kakimoto, Koichi ; Gao, Bing ; Shiramomo, Takuya ; Nakano, Satoshi ; Nishizawa, Shinichi. / Analysis of growth velocity of SiC growth by the physical vapor transport method. Silicon Carbide and Related Materials 2011, ICSCRM 2011. 2012. pp. 25-28 (Materials Science Forum).
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