Analysis of high mobility oxide thin-film transistors after a low temperature annealing process

Juan Paolo Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Chaiyanan Kulchaisit, Hiroshi Ikenoue, Yukiharu Uraoka

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

High mobilities of more than 40 cm2/Vs in amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) were achieved through a low temperature excimer laser annealing process (ELA). The improvement mechanism was determined by analyzing the changes in electrical characteristics, composition, structure, and chemical bonding of the oxide semiconductor.

元の言語英語
ホスト出版物のタイトル23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
出版者Society for Information Display
ページ839-840
ページ数2
2
ISBN(電子版)9781510845510
出版物ステータス出版済み - 1 1 2016
イベント23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, 日本
継続期間: 12 7 201612 9 2016

その他

その他23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
日本
Fukuoka
期間12/7/1612/9/16

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

Bermundo, J. P., Ishikawa, Y., Fujii, M. N., Kulchaisit, C., Ikenoue, H., & Uraoka, Y. (2016). Analysis of high mobility oxide thin-film transistors after a low temperature annealing process. : 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (巻 2, pp. 839-840). Society for Information Display.