Analysis of local segregation of impurities at a silicon melt-crystal interface during crystal growth in transverse magnetic field-applied Czochralski method

Koichi Kakimoto, Lijun Liu

研究成果: Contribution to journalArticle査読

10 被引用数 (Scopus)

抄録

We studied local segregation of impurities, including boron, phosphorus and oxygen, at an interface between the melt and crystal during crystal growth of silicon with transverse magnetic fields. A three-dimensional global model that included local segregation based on local growth rate was used in this study. It was found that the distributions of boron and phosphorus at an interface become a saw-tooth-like pattern in the case of a small crystal rotation rate, while the distribution of oxygen concentration was almost the same at different crystal rotation rates. The distributions of boron and phosphorus were determined by segregation. However, the oxygen concentration fields in the melt and the crystal are primarily influenced by the evaporation of oxygen from the melt surface and its incorporation into the melt from the crucible wall, rather than from the segregation dynamics at the melt/crystal interface.

本文言語英語
ページ(範囲)2313-2316
ページ数4
ジャーナルJournal of Crystal Growth
311
8
DOI
出版ステータス出版済み - 4 1 2009

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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