Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation

B. Gao, X. J. Chen, S. Nakano, S. Nishizawa, K. Kakimoto

研究成果: Contribution to journalArticle査読

20 被引用数 (Scopus)

抄録

A fully coupled compressible multi-phase flow solver was developed to effectively design a large furnace for producing large-size SiC crystals. Compressible effect, convection and buoyancy effects, flow coupling between argon gas and species, and the Stefan effect are included. A small and experimental furnace is used to validate the solver. First, the essentiality of 2D flow calculation and the significance of incorporating buoyancy effect and gas convection, the Stefan effect, and flow interaction between argon gas and species were investigated by numerical results. Then the effects of argon gas on deposition rate, growth rate, graphitization on the powder source, and supersaturation and stoichiometry on the seed were analyzed. Finally, the advantages of an extra chamber design were explained, and improvement of growth rate was validated by the present solver.

本文言語英語
ページ(範囲)3349-3355
ページ数7
ジャーナルJournal of Crystal Growth
312
22
DOI
出版ステータス出版済み - 11 1 2010
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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